Experimental determination of the influence of gain saturation on the temperature dependence of threshold current in short AlGaAs‐GaAs quantum‐well lasers

H. Jung; E. Schlosser; R. Deufel

doi:10.1063/1.106670

Experimental determination of the influence of gain saturation on the temperature dependence of threshold current in short AlGaAs‐GaAs quantum‐well lasers

Applied Physics Letters ◽

10.1063/1.106670 ◽

1992 ◽

Vol 60 (4) ◽

pp. 401-403 ◽

Cited By ~ 8

Author(s):

H. Jung ◽

E. Schlosser ◽

R. Deufel

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Experimental Determination ◽

Threshold Current ◽

Quantum Well Lasers ◽

Gain Saturation

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Experimental determination of transparency current density and estimation of the threshold current of semiconductor quantum well lasers

Applied Physics Letters ◽

10.1063/1.102598 ◽

1990 ◽

Vol 56 (11) ◽

pp. 1002-1004 ◽

Cited By ~ 16

Author(s):

T. R. Chen ◽

L. E. Eng ◽

Y. H. Zhuang ◽

A. Yariv

Keyword(s):

Quantum Well ◽

Experimental Determination ◽

Current Density ◽

Threshold Current ◽

Quantum Well Lasers ◽

Semiconductor Quantum Well

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Experimental Determination of the Intraband Relaxation Time in Strained Quantum Well Lasers

Hot Carriers in Semiconductors ◽

10.1007/978-1-4613-0401-2_135 ◽

1996 ◽

pp. 591-593 ◽

Cited By ~ 1

Author(s):

M. Zimmermann ◽

S. Krämer ◽

F. Steinhagen ◽

H. Hillmer ◽

H. Burkhard ◽

...

Keyword(s):

Relaxation Time ◽

Quantum Well ◽

Experimental Determination ◽

Quantum Well Lasers ◽

Intraband Relaxation ◽

Strained Quantum Well

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Experimental determination of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained-layer quantum well lasers

10.1364/ofc.1990.wj4 ◽

1990 ◽

Author(s):

J. LACOURSE ◽

B. YU ◽

W. RIDEOUT ◽

P. K. YORK ◽

K. J. BEERNINK ◽

...

Keyword(s):

Refractive Index ◽

Quantum Well ◽

Experimental Determination ◽

Enhancement Factor ◽

Quantum Well Lasers ◽

Strained Layer ◽

Linewidth Enhancement Factor ◽

Differential Gain ◽

Linewidth Enhancement

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Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Applied Physics Letters ◽

10.1063/1.124000 ◽

1999 ◽

Vol 74 (19) ◽

pp. 2743-2745 ◽

Cited By ~ 19

Author(s):

Aleksey D. Andreev ◽

Dmitry V. Donetsky

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Threshold Current ◽

Quantum Well Lasers

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Experimental determination of recombination mechanisms in strained and unstrained quantum-well lasers

10.1117/12.43797 ◽

1991 ◽

Author(s):

William C. Rideout

Keyword(s):

Quantum Well ◽

Experimental Determination ◽

Quantum Well Lasers

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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.35226 ◽

1989 ◽

Vol 25 (9) ◽

pp. 2007-2012 ◽

Cited By ~ 10

Author(s):

L.D. Zhu ◽

B.Z. Zheng ◽

G.A.B. Feak

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Quantum Efficiency ◽

Optical Gain ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index

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Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.29281 ◽

1989 ◽

Vol 25 (6) ◽

pp. 1459-1468 ◽

Cited By ~ 40

Author(s):

P. Blood ◽

E.D. Fletcher ◽

K. Woodbridge ◽

K.C. Heasman ◽

A.R. Adams

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Threshold Current ◽

Quantum Well Lasers

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Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers

Applied Physics Letters ◽

10.1063/1.114392 ◽

1995 ◽

Vol 67 (9) ◽

pp. 1265-1267 ◽

Cited By ~ 13

Author(s):

P. M. Smowton ◽

P. Blood

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Threshold Current ◽

Quantum Well Lasers

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Experimental determination of the band gap dependence of Auger recombination in InGaAs∕InP multiple quantum well lasers at room temperature

Applied Physics Letters ◽

10.1063/1.2722041 ◽

2007 ◽

Vol 90 (16) ◽

pp. 161113 ◽

Cited By ~ 14

Author(s):

N. F. Massé ◽

A. R. Adams ◽

S. J. Sweeney

Keyword(s):

Quantum Well ◽

Experimental Determination ◽

Band Gap ◽

Room Temperature ◽

Auger Recombination ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.593336 ◽

1997 ◽

Vol 9 (7) ◽

pp. 892-894 ◽

Cited By ~ 5

Author(s):

R. Huang ◽

J.G. Simmons ◽

P.E. Jessop ◽

J. Evans

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Multiple Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer

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