Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (3) ◽  
pp. 353-355 ◽  
Author(s):  
T. J. de Lyon ◽  
J. M. Woodall ◽  
D. T. McInturff ◽  
R. J. S. Bates ◽  
J. A. Kash ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Concentration Dependence ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Optical Modulation ◽  
Modulation Bandwidth ◽  
Light Emitting ◽  
Carbon Doped ◽  
Gas Source

Deep UV light emitting diodes grown by gas source molecular beam epitaxy

2007 ◽  
Vol 19 (8-9) ◽  
pp. 764-769 ◽  
Author(s):  
Sergey Nikishin ◽  
Boris Borisov ◽  
Vladimir Kuryatkov ◽  
Mark Holtz ◽  
Gregory A. Garrett ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Gas Source ◽  
Deep Uv

Temperature-Stable Wavelength TlInGaAs/InP Double Heterostructure Light-Emitting Diodes Grown by Gas Source Molecular Beam Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1168-1170 ◽  
Author(s):  
Hui-Jae Lee ◽  
Kenta Konishi ◽  
Osamu Maeda ◽  
Akiko Mizobata ◽  
Kumiko Asami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Gas Source

scholarly journals In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Abdul Kareem K. Soopy ◽  
Zhaonan Li ◽  
Tianyi Tang ◽  
Jiaqian Sun ◽  
Bo Xu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gas Sensors ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Crystal Quality ◽  
Porous Structures ◽  
Light Emitting ◽  
Photochemical Etching ◽  
Recent Advances ◽  
Low Dimensional

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type
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