High contrast ratio self‐electro‐optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry–Perot modulator

1992 ◽  
Vol 60 (4) ◽  
pp. 422-424 ◽  
Author(s):  
Li Chen ◽  
Kezhong Hu ◽  
R. M. Kapre ◽  
A. Madhukar
1991 ◽  
Vol 59 (9) ◽  
pp. 1108-1110 ◽  
Author(s):  
Kezhong Hu ◽  
Li Chen ◽  
Anupam Madhukar ◽  
Ping Chen ◽  
K. C. Rajkumar ◽  
...  

1993 ◽  
Vol 5 (1) ◽  
pp. 55-58 ◽  
Author(s):  
D.S. Gerber ◽  
R. Droopad ◽  
G.N. Maracas

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.


1991 ◽  
Vol 27 (8) ◽  
pp. 659 ◽  
Author(s):  
J.F. Heffernan ◽  
M.H. Moloney ◽  
J. Hegarty ◽  
J.S. Roberts

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