Plating‐free metal ion implantation utilizing the cathodic vacuum arc as an ion source

1992 ◽  
Vol 60 (9) ◽  
pp. 1076-1078 ◽  
Author(s):  
T. Sroda ◽  
S. Meassick ◽  
C. Chan
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
Vacuum Arc ◽  
Free Metal ◽  
Free Metal Ion ◽  
Metal Ion Implantation

Upgraded vacuum arc ion source for metal ion implantation

2012 ◽  
Vol 83 (2) ◽  
pp. 02A501 ◽  
Author(s):  
A. G. Nikolaev ◽  
E. M. Oks ◽  
K. P. Savkin ◽  
G. Yu. Yushkov ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
Vacuum Arc ◽  
Metal Ion Implantation

Advanced vacuum arc metal ion implantation systems

1997 ◽  
Vol 96 (1) ◽  
pp. 1-8 ◽  
Author(s):  
James R. Treglio ◽  
Alexander Elkind ◽  
Robert J. Stinner ◽  
Anthony J. Perry
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Vacuum Arc ◽  
Metal Ion Implantation

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

New Developments in Metal Ion Implantation by Vacuum Arc Ion Sources and Metal Plasma Immersion

1995 ◽  
Vol 396 ◽  
Author(s):  
I.G. Brown ◽  
A. Anders ◽  
S. Anders ◽  
M.R. Dickinson ◽  
R.A. MacGill ◽  
...  
Keyword(s):  
Surface Modification ◽  
Ion Implantation ◽  
Metal Ion ◽  
Arc Discharge ◽  
High Energy ◽  
Ion Source ◽  
Plasma Sheath ◽  
Vacuum Arc ◽  
Large Area ◽  
Metal Plasma

AbstractIon implantation by intense beams of metal ions can be accomplished using the dense metal plasma formed in a vacuum arc discharge embodied either in a vacuum arc ion source or in a ‘metal plasma immersion’ configuration. In the former case high energy metal ion beams are formed and implantation is done in a more-or-less conventional way, and in the latter case the substrate is immersed in the plasma and repetitively pulse-biased so as to accelerate the ions at the high voltage plasma sheath formed at the substrate. A number of advances have been made in the last few years, both in plasma technology and in the surface modification procedures, that enhance the effectiveness and versatility of the methods, including for example: controlled increase of the ion charge states produced; operation in a dual metal-gaseous ion species mode; very large area beam formation; macroparticle filtering; and the development of processing regimes for optimizing adhesion, morphology and structure. These complementary ion processing techniques provide the plasma tools for doing ion surface modification over a very wide parameter regime, from ‘pure’ ion implantation at energies approaching the MeV level, through ion mixing at energies in the ∼1 to ∼100 keV range, to IBAD-like processing at energies from a few tens of eV to a few keV. Here we review the methods, describe a number of recent developments, and outline some of the surface modification applications to which the methods have been put.

Formation of Buried Iridium Silicide Layer in Silicon by High Dose Iridium Ion Implantation

1989 ◽  
Vol 147 ◽  
Author(s):  
K. M. Yu ◽  
B. Katz ◽  
I. C. Wu ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Room Temperature ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Interface Morphology ◽  
Silicide Layer

AbstractWe have investigated the formation of IrSi3 layers buried in <111> silicon. The layers are formed by iridium ion implantation using a metal vapor vacuum arc (MEVVA) high current metal ion source at room temperature with average beam energy = 130 keV. Doses of the Ir ions ranging from 2×1016 to 1.5×1017/cm2 were implanted into <111> Si. The formation of IrSi3 phase is realized after annealing at temperatures as low as 500°C. A continuous IrSi3 layer of =200 Å thick buried under =400 Å Si was achieved with samples implanted with doses not less than 3.5×1016/cm2. Implantated doses above 8×1016/cm2 resulted in the formation of an IrSi3 layer on the surface due to excessive sputtering of Si by the TI ions. The effects of implant dose on phase formation, interface morphology and implanted atom redistribution are discussed. Radiation damage and regrowth of Si due to the implantation process was also studied.

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