Liquid phase epitaxy of cubic FeSi2on (111) Si induced by pulsed laser irradiation

1992 ◽  
Vol 60 (9) ◽  
pp. 1132-1134 ◽  
Author(s):  
M. G. Grimaldi ◽  
P. Baeri ◽  
C. Spinella ◽  
S. Lagomarsino
2003 ◽  
Vol 83 (18) ◽  
pp. 3704-3706 ◽  
Author(s):  
V. A. Gnatyuk ◽  
T. Aoki ◽  
O. S. Gorodnychenko ◽  
Y. Hatanaka

1983 ◽  
Vol 23 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Gibson ◽  
D. C. Jacobson ◽  
J. M. Poate

ABSTRACTEpitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.


1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-23-C5-36 ◽  
Author(s):  
H. Kurz ◽  
L. A. Lompré ◽  
J. M. Liu

Author(s):  
Nguyen Phi Long ◽  
Hiroyuki Daido ◽  
Yukihiro Matsunaga ◽  
Tomonori Yamada ◽  
Akihiro Nishimura ◽  
...  

Author(s):  
Katia del Carmen Martínez Guzmán ◽  
Sadasivan Shaji ◽  
Tushar Kanti Das Roy ◽  
Bindu Krishnan ◽  
David Avellaneda Avellaneda ◽  
...  

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