Absorption redshift in TiO2ultrafine particles with surfacial dipole layer

1991 ◽  
Vol 59 (15) ◽  
pp. 1826-1828 ◽  
Author(s):  
Bingsuo Zhou ◽  
Liangzhi Xiao ◽  
Tie Jin Li ◽  
Jialong Zhao ◽  
Zhuyou Lai ◽  
...  
Keyword(s):  
Dipole Layer ◽  
Absorption Redshift

Inherent Dipole Layer Formation Driven by Surface Energy at Nonplanar Dielectric Interface

2020 ◽  
pp. 1-5
Author(s):  
Yu Fang ◽  
Wen-Jay Lee ◽  
An-Chen Yang ◽  
Guan-Peng Chen ◽  
Nan-Yow Chen ◽  
...  
Keyword(s):  
Surface Energy ◽  
Layer Formation ◽  
Dielectric Interface ◽  
Dipole Layer

A fit to nerve membrane rectification curves with a double-dipole-layer membrane model

1972 ◽  
Vol 34 (2) ◽  
pp. 151-172 ◽  
Author(s):  
Richard A. Arndt ◽  
James D. Bond ◽  
L. David Roper
Keyword(s):  
Membrane Model ◽  
Nerve Membrane ◽  
Dipole Layer ◽  
Layer Membrane

scholarly journals Organic Solar Cells: A New Interconnecting Layer of Metal Oxide/Dipole Layer/Metal Oxide for Efficient Tandem Organic Solar Cells (Adv. Energy Mater. 17/2015)

2015 ◽  
Vol 5 (17) ◽  
pp. n/a-n/a ◽  
Author(s):  
Shunmian Lu ◽  
Xing Guan ◽  
Xinchen Li ◽  
Wei E. I. Sha ◽  
Fengxian Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Oxide ◽  
Organic Solar Cells ◽  
Dipole Layer ◽  
Energy Mater

Simulation of A-SI Pin Solar Cells with Buffer

1993 ◽  
Vol 297 ◽  
Author(s):  
P.H Pfleiderer H
Keyword(s):  
Solar Cells ◽  
Space Charge ◽  
Numerical Simulations ◽  
Inversion Layer ◽  
Surface Recombination ◽  
Small Signal ◽  
Front Side ◽  
Dipole Layer ◽  
Field Peak ◽  
Typical Cell

The buffer of standard solar cells restricts the "surface recombination" at the front side. Some typical cell properties linked to the buffer are exposed by numerical simulations: The "blue snake" appearing in small-signal photocharacteristics, the electron inversion layer, the reverse field peak and the satellite space-charge dipole layer. It is possible to base a simulation on the roots of an algebraic equation.

Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

2012 ◽  
Vol 51 ◽  
pp. 081303 ◽  
Author(s):  
Shinya Hibino ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K

Self‐trapped state and phonon localization in TiO2quantum dot with a dipole layer

1993 ◽  
Vol 73 (9) ◽  
pp. 4689-4690 ◽  
Author(s):  
Bingsuo Zou ◽  
Yan Zhang ◽  
Liangzhi Xiao ◽  
Tiejin Li
Keyword(s):  
Dipole Layer ◽  
Phonon Localization

Gas Sensor Using an Aluminium-Porous Silicon Junction Application to the Detection of Non-Zero Molecular Dipole Moment

1994 ◽  
Vol 358 ◽  
Author(s):  
D. Stievenard ◽  
D. Deresmes
Keyword(s):  
Dipole Moment ◽  
Porous Silicon ◽  
Silicon Oxide ◽  
Surface States ◽  
Dangling Bonds ◽  
Porous Si ◽  
Adsorbed Gas ◽  
Dipole Layer ◽  
Dc Current ◽  
Partial Depletion

ABSTRACTPorous silicon is known to be sensitive to moisture. Using an aluminium-porous p+ silicon junction, we have realized a sensor which dc current increases up to two orders of magnitude in the presence of ammoniac. We have tested a series of various gases and we show that if the dipole moment of the molecule is zero, there is no effect on the dc current. To interpret quantitatively this phenomenon, we assume that the conductivity is governed by the width of a channel resulting from the partial depletion of silicon located between two pores. This depleted region is due to the charges trapped on surface states associated with the Si-SiO2 interface where SiO2 is the native silicon oxide. When some gas is adsorbed, we propose there is a passivation of the interface states (mainly dangling bonds), leading to a decrease of the depleted region, i.e. an increase of the width of the channel and thus an increase of the current. The adsorbed gas gives a dipole layer at the surface of the pore. This layer has no influence on the depleted region. It stabilizes electrons or holes at the porous Si surface, allowing a stable charge state of the dangling bonds.

Counter dipole layer formation in SiO2/high-k/SiO2/Si gate stacks

2012 ◽  
Author(s):  
S. Hibino ◽  
T. Nishimura ◽  
K. Nagashio ◽  
K. Kita ◽  
A. Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K

Interfacial Energy Level Alignment at Acid Oxidized Carbon Nanotube - Triphenyldiamine Contacts

2010 ◽  
Vol 1258 ◽  
Author(s):  
Li Wei Tan ◽  
Ross A. Hatton ◽  
Cristina E. Giusca ◽  
Ravi Silva
Keyword(s):  
Carbon Nanotube ◽  
Organic Semiconductor ◽  
Photoelectron Spectroscopy ◽  
Time Frame ◽  
Spectroscopy Study ◽  
Semiconductor Interface ◽  
Dipole Layer ◽  
Oxidized Carbon ◽  
The Difference ◽  
Electrical Equilibrium

AbstractWe report an ultraviolet photoelectron spectroscopy study of the energetics at the interface between acid oxidised carbon nanotubes and the archetypical molecular N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'diamine(TPD). Electrical equilibrium is achieved across both interfaces within the experiment time frame due to the formation of an interfacial dipole layer which abruptly shifts the vacuum level at the interface. To the authors knowledge this is the first reported measurement of the electronic structure of a carbon nanotube / organic semiconductor interface; a system in which the magnitude of the dipole layer formed at the interface upon contact formation is proportional to the difference in work function between the substrate and organic semiconductor overlayer.

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