Writing electronically active nanometer‐scale structures with a scanning tunneling microscope

1991 ◽  
Vol 59 (17) ◽  
pp. 2136-2138 ◽  
Author(s):  
E. Hartmann ◽  
R. J. Behm ◽  
G. Krötz ◽  
G. Müller ◽  
F. Koch
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Scale Structures

Regular artificial nanometer‐scale structures fabricated with scanning tunneling microscope

1995 ◽  
Vol 66 (14) ◽  
pp. 1747-1749 ◽  
Author(s):  
Q. J. Gu ◽  
N. Liu ◽  
W. B. Zhao ◽  
Z. L. Ma ◽  
Z. Q. Xue ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Tunneling Microscope ◽  
Scale Structures

Nanometer‐scale hole formation on graphite using a scanning tunneling microscope

1989 ◽  
Vol 55 (17) ◽  
pp. 1727-1729 ◽  
Author(s):  
T. R. Albrecht ◽  
M. M. Dovek ◽  
M. D. Kirk ◽  
C. A. Lang ◽  
C. F. Quate ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Hole Formation ◽  
Tunneling Microscope

Real-Space Imaging of Nanoscale Electrodeposited Ceramic Superlattices in the Scanning Tunneling Microscope

1992 ◽  
Vol 286 ◽  
Author(s):  
Teresa D. Golden ◽  
Ryne P. Raffaelle ◽  
Richard J. Phillips ◽  
Jay A. Switzer
Keyword(s):  
Cross Sections ◽  
Scanning Tunneling Microscope ◽  
Real Space ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Ceramic Oxides ◽  
Tunneling Microscope ◽  
Stm Images ◽  
Modulation Wavelength

ABSTRACTWe have imaged fractured cross-sections of electrodeposited ceramic oxides based on the TI-Pb-O system using a scanning tunneling microscope. The goal of this work is to measure both the modulation wavelength and compositional profile of the superlattices by mapping out the electronic properties in real space on a nanometer scale. Fourier analysis was done on STM images of all superlattices to yield the modulation wavelength. The modulation wavelength from STM was then compared with those obtained, by Faraday calculation and x-ray diffraction. The STM can be used to design “better” superlattices. We have found that the composition profile in superlattices deposited by modulating the potential was more square than in superlattices deposited by modulating the current.

Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Evoy ◽  
C. K. Harnett ◽  
S. Keller ◽  
U. K. Mishra ◽  
S. P. DenBaars ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Multiple Quantum Well ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Multiple Quantum ◽  
Proof Of Concept ◽  
Cross Sectional ◽  
Tunneling Microscope ◽  
Nm Range

AbstractWe present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of Ld=30–55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30–100 nm wide smooth fluctuations of luminescence.

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