In situ determination of dielectric functions and optical gap of ultrathin amorphous silicon by real time spectroscopic ellipsometry

1991 ◽  
Vol 59 (20) ◽  
pp. 2543-2545 ◽  
Author(s):  
Ilsin An ◽  
Y. M. Li ◽  
C. R. Wronski ◽  
H. V. Nguyen ◽  
R. W. Collins
Keyword(s):  
Amorphous Silicon ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Optical Gap

Real-time in-situ determination of free Cu(II) at picomolar levels in sea water using a fluorescence lifetime-based fiber optic biosensor

2002 ◽  
Author(s):  
Richard B. Thompson ◽  
Hui-Hui Zeng ◽  
Carol A. Fierke ◽  
Gary Fones ◽  
James W. Moffett
Keyword(s):  
Real Time ◽  
Fluorescence Lifetime ◽  
Fiber Optic ◽  
Sea Water

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Random Access ◽  
Copper Interconnects ◽  
Access Memory ◽  
Barrier Layers ◽  
The Stability

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

Precise Determination of Percent Cure of Epoxide Polymers and Composites via Fiber-Optic Raman Spectroscopy and Multivariate Analysis

1997 ◽  
Vol 51 (2) ◽  
pp. 247-252 ◽  
Author(s):  
Jeffrey F. Aust ◽  
Karl S. Booksh ◽  
Christopher M. Stellman ◽  
Richard S. Parnas ◽  
Michael L. Myrick
Keyword(s):  
Raman Spectroscopy ◽  
Multivariate Analysis ◽  
Real Time ◽  
Fiber Optic ◽  
Precise Determination ◽  
Probe Design ◽  
Epoxide Polymers ◽  
Time Determination

A method for real-time determination of the percent cure of epoxies via in situ fiber-optic Raman spectroscopy has been developed. This method utilizes a probe design developed for real-time monitoring of polymer curing and multivariate analysis to interpret the data and determine percent cure. This method was demonstrated to be reliable to ±0.54% of cure in laboratory samples over a 50–99% cure range. A preliminary study measuring cure percentage in an industrial, glass-reinforced composite has been shown to be reliable to ±0.82% in the 40–90% cure range.

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