High electron mobility in modulation‐doped Si/SiGe quantum well structures

G. Schuberth; F. Schäffler; M. Besson; G. Abstreiter; E. Gornik

doi:10.1063/1.105718

High electron mobility in modulation‐doped Si/SiGe quantum well structures

Applied Physics Letters ◽

10.1063/1.105718 ◽

1991 ◽

Vol 59 (25) ◽

pp. 3318-3320 ◽

Cited By ~ 37

Author(s):

G. Schuberth ◽

F. Schäffler ◽

M. Besson ◽

G. Abstreiter ◽

E. Gornik

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures

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Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

Applied Physics Letters ◽

10.1063/1.122582 ◽

1998 ◽

Vol 73 (19) ◽

pp. 2760-2762 ◽

Cited By ~ 45

Author(s):

M. Behet ◽

K. van der Zanden ◽

G. Borghs ◽

A. Behres

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Gaas Substrates

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Modulation-doped InAlAs/InGaAs quantum well structures for high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587030 ◽

1994 ◽

Vol 12 (2) ◽

pp. 1306 ◽

Cited By ~ 3

Author(s):

W. Klein

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Electron Mobility Transistors ◽

Ingaas Quantum Well

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Molecular beam epitaxial growth of high electron mobility deep quantum well structures

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00975-x ◽

1997 ◽

Vol 175-176 ◽

pp. 868-872 ◽

Cited By ~ 11

Author(s):

Naohiro Kuze ◽

Hiromasa Goto ◽

Masahiro Matsui ◽

Ichiro Shibasaki ◽

Hiroyuki Sakaki

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility

Surface Science ◽

10.1016/0039-6028(86)90442-5 ◽

1986 ◽

Vol 174 (1-3) ◽

pp. 399-400 ◽

Cited By ~ 2

Author(s):

J.M. Woodall ◽

P.D. Kirchner ◽

G.D. Pettit ◽

J.J. Rosenberg

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

Quantum Well Structures

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Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility

Surface Science Letters ◽

10.1016/0167-2584(86)90069-1 ◽

1986 ◽

Vol 174 (1-3) ◽

pp. A448

Author(s):

J.M. Woodall ◽

P.D. Kirchner ◽

G.D. Pettit ◽

J.J. Rosenberg

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

Quantum Well Structures

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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Nonmonotonous Electron Mobility in Double Quantum Well Pseudomorphic High Electron Mobility Transistor Structure

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783894 ◽

2019 ◽

Author(s):

Sangita R. Panda ◽

Sudhakar Das ◽

Arttatran Sahu ◽

Ajit Kumar Panda ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Double Quantum Well

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Structural asymmetry induced nonmonotonic electron mobility in pseudomorphic double quantum well high electron mobility transistor structure

Physica Scripta ◽

10.1088/1402-4896/ab5ba5 ◽

2020 ◽

Vol 95 (5) ◽

pp. 054003

Author(s):

Ajit Kumar Panda ◽

Sangita R Panda ◽

Arttatran Sahu ◽

Sudhakar Das ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Double Quantum ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility ◽

Structural Asymmetry ◽

Double Quantum Well

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Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

2010 27th International Conference on Microelectronics Proceedings ◽

10.1109/miel.2010.5490501 ◽

2010 ◽

Author(s):

R. Yahyazadeh ◽

Z. Hashempour

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Effect Of Temperature ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electronic Current

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Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588363 ◽

1995 ◽

Vol 13 (2) ◽

pp. 273 ◽

Cited By ~ 2

Author(s):

R. T. Hsu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well

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