Scanning tunneling microscopy on chemical vapor deposited diamond films

1991 ◽  
Vol 59 (3) ◽  
pp. 295-297 ◽  
Author(s):  
H.‐G. Busmann ◽  
H. Sprang ◽  
I. V. Hertel ◽  
W. Zimmermann‐Edling ◽  
H.‐J. Güntherodt
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited

scholarly journals Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films

1993 ◽  
Vol 62 (16) ◽  
pp. 1889-1891 ◽  
Author(s):  
J. M. Perez ◽  
C. Lin ◽  
W. Rivera ◽  
R. C. Hyer ◽  
M. Green ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Scanning Tunneling Microscopy ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited

Tip for scanning tunneling microscopy made of monocrystalline, semiconducting, chemical vapor deposited diamond

1992 ◽  
Vol 60 (26) ◽  
pp. 3232-3234 ◽  
Author(s):  
Eric P. Visser ◽  
Jan W. Gerritsen ◽  
Willem J. P. van Enckevort ◽  
Herman van Kempen
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Vapor Deposited

scholarly journals Microwave plasma chemical vapor deposited diamond tips for scanning tunneling microscopy

1997 ◽  
Vol 71 (19) ◽  
pp. 2848-2850 ◽  
Author(s):  
Sacharia Albin ◽  
Jianli Zheng ◽  
John B. Cooper ◽  
Weihai Fu ◽  
Arnel C. Lavarias
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Plasma Chemical ◽  
Chemical Vapor Deposited

Investigating point defects in irradiated boron-doped diamond films by temperature-dependent electrical properties and scanning tunneling microscopy and spectroscopy

2010 ◽  
Vol 25 (3) ◽  
pp. 444-457 ◽  
Author(s):  
Sanju Gupta ◽  
John Farmer ◽  
Dario Daghero ◽  
Renato Gonnelli
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Point Defects ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Dependent ◽  
Boron Doped Diamond ◽  
Boron Doped

We report temperature-dependent electrical resistivity (or dc conductivity, σdc) down to 4 K for pristine and gamma-irradiated microwave plasma-assisted chemical vapor-deposited boron-doped diamond films with [B]/[C]gas = 4000 ppm to gain insights into the nature of conduction mechanism, distribution, and kinetics of point defects generated due to gamma irradiation prompted by the article [Gupta et al., J. Mater. Res.24, 1498 (2009)]. The pristine samples exhibit typical metallic conduction up to 50 K and with reduction in temperature to 25 K, the σdc decreases monotonically followed by saturation at 4 K, suggesting “disordered” metal or “localized” behavior. For irradiated films, continuous increasing resistivity with decreasing temperature demonstrates semiconducting behavior with thermal activation/hopping conduction phenomena. It is intriguing to propose that irradiation leads to substantial hydrogen redistribution leading to unexpected low-temperature resistivity behavior. Scanning tunneling microscopy/spectroscopy helped to illustrate local grain and grain boundary effects.

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