Efficient continuous wave operation of vertical‐cavity semiconductor lasers using buried‐compensation layers to optimize current flow

1991 ◽  
Vol 59 (1) ◽  
pp. 31-33 ◽  
Author(s):  
M. Orenstein ◽  
N. G. Stoffel ◽  
A. C. Von Lehmen ◽  
J. P. Harbison ◽  
L. T. Florez
1997 ◽  
Vol 3 (2) ◽  
pp. 359-365 ◽  
Author(s):  
N.M. Margalit ◽  
J. Piprek ◽  
S. Zhang ◽  
D.I. Babic ◽  
K. Streubel ◽  
...  

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.


2017 ◽  
Vol 3 (4) ◽  
pp. e1602570 ◽  
Author(s):  
Atula S. D. Sandanayaka ◽  
Toshinori Matsushima ◽  
Fatima Bencheikh ◽  
Kou Yoshida ◽  
Munetomo Inoue ◽  
...  

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