Effect of growth temperature on photoluminescence of InAs grown by organometallic vapor phase epitaxy

1991 ◽  
Vol 59 (12) ◽  
pp. 1446-1448 ◽  
Author(s):  
Z. M. Fang ◽  
K. Y. Ma ◽  
R. M. Cohen ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2040-2042 ◽  
Author(s):  
Takashi Kawasaki ◽  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Yoshikazu Terai ◽  
Yasufumi Fujiwara
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

scholarly journals Growth Temperature Dependence of Eu-Doped GaN Grown by Organometallic Vapor Phase Epitaxy

2010 ◽  
Vol 59 (9) ◽  
pp. 671-674
Author(s):  
Atsushi NISHIKAWA ◽  
Takashi KAWASAKI ◽  
Naoki FURUKAWA ◽  
Yoshikazu TERAI ◽  
Yasufumi FUJIWARA
Keyword(s):  
Temperature Dependence ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Temperature Dependence

EL-2 Defect Formation and Carbon Incorporation in GaAs grown by Organometallic Vapor Phase Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
R. Venkatasubramanian ◽  
J.M. Borrego ◽  
S.K. Ghandhi
Keyword(s):  
Partial Pressure ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Defect Formation ◽  
Deep Level ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Species ◽  
Phase Loss

AbstractThe anti-site defect AsGa, EL-2, is used to understand the nature of arsenic surface species during the Organometallic Vapor Phase Epitaxy(OMVPE) of GaAs. The concentration of EL-2 in unintentionally doped n-GaAs, measured by Deep Level Transient Spectroscopy, is presented as a function of AsH3 partial pressure, TMGa partial pressure and the growth temperature. Based on this data, a model for EL-2 incorporation in OMVPE GaAs is developed in which all surface species As-H, are converted to As2 at around 765 ° C. Under the same set of growth conditions, relative carbon levels measured by 4K Photoluminescence, suggest that the increase in carbon levels with growth temperature is due to the gas-phase loss of H radical from the As-H species.

Alkoxide Doping of GaAs During Organometallic Vapor Phase Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
Y. Park ◽  
M. Skowronski ◽  
T. M. Rosseel
Keyword(s):  
Activation Energy ◽  
Band Gap ◽  
Oxygen Content ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Deep Level ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Intensity ◽  
Organometallic Vapor Phase Epitaxy ◽  
Fully Depleted

ABSTRACTDoping of GaAs with dimethylaluminum methoxide and its effects have been studied during metalorganic vapor phase epitaxy. Oxygen concentration decreases exponentially with increasing growth temperature and the activation energy equal to 1.8 eV.Increase of oxygen content with decrease of V/III ratio indicates that oxygen most likely occupies arsenic site. Photoluminescence intensity was observed to decrease with increasing oxygen contentand three new deep level luminescence peaks appeared at 75, 96, and 160 meV below the band gap. This, together with the fact that as-grown layers are fully depleted, indicates that oxygen is electrically active in OMVPE GaAs and forms deep non-radiative recombinationcenters.

Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy

1988 ◽  
Vol 53 (21) ◽  
pp. 2053-2055 ◽  
Author(s):  
Masahiko Kondow ◽  
Hiroshi Kakibayashi ◽  
Shigekazu Minagawa ◽  
Youji Inoue ◽  
Taneo Nishino ◽  
...  
Keyword(s):  
Crystalline Structure ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy
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