High‐temperature operation (to 180  °C) of 0.98 μm strained single quantum well In0.2Ga0.8As/GaAs lasers

1991 ◽  
Vol 58 (13) ◽  
pp. 1437-1439 ◽  
Author(s):  
J. P. van der Ziel ◽  
Naresh Chand
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation

High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (10) ◽  
pp. 857-859 ◽  
Author(s):  
H.K. Choi ◽  
C.A. Wang ◽  
D.F. Kolesar ◽  
R.L. Aggarwal ◽  
J.N. Walpole
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation

Quenching of photoluminescence from GaAs/AlGaAs single quantum well by an electric field at high temperature

1985 ◽  
Vol 1 (2) ◽  
pp. 111-113 ◽  
Author(s):  
M. Yamanishi ◽  
Y. Kan ◽  
T. Minami ◽  
I. Suemune ◽  
H. Yamamoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Thermal quenching of extrinsic photoluminescence of GaAs-Ga1-x Al x As single quantum well

1988 ◽  
Vol 10 (10) ◽  
pp. 1243-1248 ◽  
Author(s):  
Y. Chen ◽  
A. Hameury ◽  
J. Massies ◽  
C. Neri
Keyword(s):  
Quantum Well ◽  
Thermal Quenching ◽  
Single Quantum ◽  
Single Quantum Well

Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm

2020 ◽  
Vol 111 ◽  
pp. 103567
Author(s):  
V. Pačebutas ◽  
B. Čechavičius ◽  
A. Krotkus
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well
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