Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition

1991 ◽  
Vol 58 (13) ◽  
pp. 1416-1418 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
W. S. Hobson ◽  
H. S. Luftman
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Metalorganic Chemical

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers

2000 ◽  
Vol 622 ◽  
Author(s):  
R. Dimitrov ◽  
V. Tilak ◽  
M. Murphy ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Structural And Electrical Properties ◽  
Metalorganic Chemical

ABSTRACTIn this study thin AlxGa1−xN nucleation layers on sapphire were patterned and overgrown by plasma-induced molecular beam epitaxy (PIMBE) and metalorganic chemical vapor deposition (MOCVD) to obtain adjacent regions of GaN and AlGaN/GaN heterostructures with different polarities. The role of polarity on the structural and electrical properties of epitaxial layers and AlGaN/GaN heterostructures was investigated for samples grown on patterned AlN or GaN nucleation layers. Epitaxial GaN and AlGaN/GaN heterostructures grown on Al-face AlN or N- face GaN nucleation layers were found to be Ga-face or N-face, respectively, independent of the technique used for the overgrowth.

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