Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems

1991 ◽  
Vol 58 (25) ◽  
pp. 2904-2906 ◽  
Author(s):  
R. Platzer ◽  
U. Wöhrmann ◽  
X. L. Ding ◽  
R. Fink ◽  
G. Krausch ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Compound Formation ◽  
Interface Compound

Interface compound formation in Ni/In thin film couples

Vacuum ◽  
1990 ◽  
Vol 41 (4-6) ◽  
pp. 1325-1326
Author(s):  
G. Krausch ◽  
R. Platzer ◽  
U. Wöhrmann ◽  
X.L. Ding ◽  
R. Fink ◽  
...  
Keyword(s):  
Thin Film ◽  
Compound Formation ◽  
Interface Compound

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
L. J. Sinnamon ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Layer Thickness ◽  
Perovskite Phase ◽  
Frequency Dispersion ◽  
Dead Layer ◽  
Parameter Ratio ◽  
Thin Film Capacitors ◽  
Dead Layer Thickness ◽  
The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (1 1 1)

2019 ◽  
Vol 473 ◽  
pp. 348-354 ◽  
Author(s):  
Burcu Toydemir Yasasun ◽  
Aykut Can Onel ◽  
Ilknur Gunduz Aykac ◽  
Mehmet Ali Gulgun ◽  
Leyla Colakerol Arslan
Keyword(s):  
Thin Film ◽  
Layer Thickness

Kinetics of compound formation in thin film couples of Al and transition metals

1976 ◽  
Vol 13 (1) ◽  
pp. 68-71 ◽  
Author(s):  
J. K. Howard ◽  
R. F. Lever ◽  
P. J. Smith ◽  
P. S. Ho
Keyword(s):  
Thin Film ◽  
Transition Metals ◽  
Compound Formation ◽  
Kinetics Of

Active-layer Thickness Effects Related to the Threshold Voltage and Mobility Degradation in Poly-crystalline ZnO Thin-Film Transistors

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1307-1311 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Yu-Mi Kim ◽  
Jeong-Gyu Park ◽  
Seung-Dong Yang ◽  
Ho-Jin Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Active Layer Thickness ◽  
Zno Thin Film ◽  
Mobility Degradation
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