Secondary electron emission spectroscopy: A sensitive and novel method for the characterization of the near‐surface region of diamond and diamond films

1991 ◽  
Vol 58 (4) ◽  
pp. 361-363 ◽  
Author(s):  
Alon Hoffman ◽  
Steven Prawer ◽  
Mordechai Folman
Keyword(s):  
Electron Emission ◽  
Emission Spectroscopy ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Surface Region ◽  
Near Surface ◽  
Novel Method

Characterization of Flame Grown Diamond Films by Luminescence and EPR

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Pereira ◽  
E. Pereira ◽  
C. Tavares ◽  
M. Neto ◽  
A. Creades ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Growth Conditions ◽  
Diamond Like Carbon ◽  
Diamond Phase

ABSTRACTFlame grown diamond films, depending on the growth conditions may present various amounts of diamond like carbon (DLC) besides the diamond phase. A correlation of the morphology with the secondary electron emission, cathodoluminescence, photoluminescence, EPR and Raman data is presented for samples grown using in different ratios of oxygen and acetylene.

Secondary Electron Emission from Boron Doped Diamond Films Grown by MPCVD

2013 ◽  
Vol 28 (5) ◽  
pp. 688-692
Author(s):  
丁明清 DING Ming-qing ◽  
李莉莉 LI Li-li ◽  
冯进军 FENG Jin-jun
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
Boron Doped

Secondary electron emission properties of double-layer B-doped diamond films

2020 ◽  
Vol 106 ◽  
pp. 107826 ◽  
Author(s):  
Kongting Wei ◽  
Ruozheng Wang ◽  
Jie Li ◽  
Biye Liu ◽  
Qiang Wei ◽  
...  
Keyword(s):  
Double Layer ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Emission Properties

Characterization of electronic structure in dielectric materials by making use of the secondary electron emission

2013 ◽  
Vol 13 (2) ◽  
pp. 396-402 ◽  
Author(s):  
Han S. Uhm ◽  
Joon H. Choi ◽  
Guangsup Cho ◽  
Byoung J. Park ◽  
Ran J. Jung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Dielectric Materials

Secondary Electron Emission Contrast of Quantum Wells in GaAs p-i-n Junctions

2009 ◽  
Vol 15 (2) ◽  
pp. 125-129 ◽  
Author(s):  
Enrique Grunbaum ◽  
Zahava Barkay ◽  
Yoram Shapira ◽  
Keith W.J. Barnham ◽  
David B. Bushnell ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Quantum Wells ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Contrast Mechanisms ◽  
Novel Method ◽  
Profile Changes ◽  
Scanning Electron

AbstractThe secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fermi level. Additional SE contrast mechanisms are discussed in relation to the dopant regions themselves as well as the AlGaAs window at the p-region. A novel method of in situ observation of the SE profile changes resulting from reverse biasing these structures shows that the built-in potential may be deduced. The obtained value of 0.7 eV is lower than the conventional bulk value due to surface effects.

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