Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface
Keyword(s):
Keyword(s):
1997 ◽
Vol 13
(11)
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pp. 971-973
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Keyword(s):
2017 ◽
Vol 47
(2)
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pp. 1201-1207
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