X‐ray rocking curve measurement of composition and strain in Si‐Ge buffer layers grown on Si substrates

1991 ◽  
Vol 58 (8) ◽  
pp. 825-827 ◽  
Author(s):  
M. Fatemi ◽  
R. E. Stahlbush
Keyword(s):  
Buffer Layers ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

1998 ◽  
Vol 541 ◽  
Author(s):  
Shogo Imada ◽  
Shigeto Shouriki ◽  
Eisuke Tokumitsu ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Ferroelectric Properties ◽  
High Energy ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Epitaxial Relationships and Electrical Properties of SrTiO3 Films on Various Thin -Fluoride/Si Structures

1994 ◽  
Vol 341 ◽  
Author(s):  
B. K. Moon ◽  
H. Ishiwara
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Initial Stage ◽  
Growth Method ◽  
Step Growth

AbstractCrystalline strontium titanate (SrTiO3:STO) films were grown on Si(111) and Si(100) substrates using thin SrF2 and CaF2 buffer layers by two-step growth method. In all cases, fluoride buffer layers were effective in growing STO films on Si substrates, which is probably due to that fluoride buffer layers have excellent crystallinity and they can prevent formation of amorphous SiO2 layers on Si substrates at the initial stage of the STO deposition. It was found from X-ray diffraction and pole-figure measurements that (110)-oriented STO crystallites with three different positions to the substrate were grown on Si(111) substrates for both SrF2 and CaF2 buffer layers. In constrast, (100)-oriented STO films with 12-fold symmetry were grown on a SrF2/Si(100), and mixed (110)- and (100)-oriented STO crystallites were grown on a CaF2/Si(100) structure. It was concluded from these results that better crystallinity of STO films can be obtained on the SrF2 buffer layer in case of Si(111) and on the CaF2 buffer layer in case of Si(100). It was also found from I-V and C-V analyses that the STO films have good insulating and dielectric characteristics. For a SrTiO3 film on SrF2/Si(111) structure, the best values of breakdown field (at l.μA/cm2), resistivity (at IMV/cm) and dielectric constant were 2.3MV/cm, 8.2 × 1012 Ωcm and 72, respectively.

Lattice Relaxation of AlN Buffer on Surface-Treated SiC in Molecular-Beam Epitaxy for Growth of High-Quality GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
Jun Suda ◽  
Kouhei Miura ◽  
Misako Honaga ◽  
Norio Onojima ◽  
Yusuke Nishi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Relaxation ◽  
Buffer Layers ◽  
Rocking Curve ◽  
X Ray ◽  
Hcl Gas ◽  
Aln Buffer ◽  
Atomically Flat

ABSTRACTThe effects of SiC surface treatment on the lattice relaxation of AlN buffer layers and the crystalline quality of GaN layers grown on the buffer layers were studied. AlN buffer layers and GaN main layers were grown by plasma-assisted molecular-beam epitaxy on on-axis 6H-SiC (0001)Si substrates. High-temperature HCl-gas etching resulted in an atomically flat SiC surface with (√3×√3)R30° surface reconstruction, while HCl-gas etching followed by HF chemical treatment resulted in an atomically flat surface with (1×1) structure. The AlN layer grown on the (1×1) surface showed slower lattice relaxation. GaN grown on the AlN buffer layer exhibited a (0002) X-ray rocking curve of 70 arcsec and 107 cm−2 of screw-type dislocation density, which was superior than that of GaN grown on (√3×√3)R30° surface.

Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray

2001 ◽  
Vol 693 ◽  
Author(s):  
Edward A. Preble ◽  
Peter Q. Miraglia ◽  
Amy M. Roskowski ◽  
Sven Einfeldt ◽  
Robert F. Davis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layers ◽  
Film Properties ◽  
Rocking Curve ◽  
X Ray ◽  
Algan Buffer ◽  
Substrate Influence ◽  
Meaningful Data

AbstractNon-uniformity in GaN thin films deposited on 6H-SiC can make determining the effects of growth variables difficult. Results presented in this work show the effects of the SiC substrates on the GaN films, and how to correct for these effects to obtain meaningful data about the properties of the thin film rather than the substrate underneath. Rocking curve values of GaN thin films are found to track almost 1:1 with the values of the underlying SiC. Plotting rocking curves with respect to the substrate, as well as a variable of importance can therefore yield more meaningful and reliable comparisons instead of plotting the data for the variable alone. This procedure is used to demonstrate the effects of thickness and AlN and AlGaN buffer layers on GaN thin films.

Direct Heteroepitaxial Growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) Substrates by MBE

1993 ◽  
Vol 302 ◽  
Author(s):  
T. J. de Lyon ◽  
S. M. Johnson ◽  
C. A. Cockrum ◽  
O. K. Wu ◽  
J. A. Roth
Keyword(s):  
Epitaxial Films ◽  
Buffer Layers ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Composite Substrates ◽  
Surface Morphologies ◽  
Spectroscopy Optical

ABSTRACTEpitaxial films of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0-8 degrees towards the [011] direction. The films were characterized with x ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Through use of ZnTe buffer layers, single crystal CdZnTe(100) films have been demonstrated on both 4° and 8° misoriented Si with structural quality comparable to that obtained with GaAs/Si composite substrates. X ray rocking curves for ZnTe(400) with FWHM less than 300 arcseconds and for CdZnTe(400) with FWHM less than 160 arcseconds have been obtained for as-grown films. The observed surface morphologies are superior to those obtained on GaAs/Si composite substrates. HgCdTe(100) films with x ray FWHM as low as 55 arcseconds and average etch pit densities of 5 x 106 cm−2 have been deposited by liquid phase epitaxy on these MBE CdZnTe/ZnTe/Si substrates.

Defect Microstructure of Thin Wurtzite GaN Films Grown by MBE

1995 ◽  
Vol 395 ◽  
Author(s):  
B.N. Sverdlov ◽  
A. Botchkarev ◽  
G.A. Martin ◽  
A. Salvador ◽  
H. MorkoÇ ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Full Width ◽  
Cross Sectional ◽  
Rocking Curve ◽  
X Ray ◽  
Transmission Electron ◽  
Threading Defects ◽  
Defect Densities ◽  
Defect Microstructure

ABSTRACTThin films of wurtzite GaN have been grown by molecular beam epitaxy on 6H SiC (basal plane), Si {111} and sapphire (c-plane) substrates with and without various buffer layers. The defect microstructure of the films and the substrate/buffer/GaN interfacial quality have been characterized by cross-sectional transmission electron microscopy. The morphology was dominated by threading defects that originated at the substrate/buffer and/or buffer/film interfaces. Typical defect densities dropped rapidly with distance from the substrate but remained ∼108–109/cm2, depending on the particular substrate, for film thicknesses approaching one micron or more. The best quality films were grown at 770°C on sapphire with A1N buffer layers, and had X-ray rocking curve full-width at half-maximum values of ∼ 55arc-sec.

Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

1995 ◽  
Vol 399 ◽  
Author(s):  
A. Gray ◽  
N.K. Dhar ◽  
W. Clark ◽  
P. Charlton ◽  
J.H. Dinan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

ABSTRACTX-ray diffraction spectra of CdTe epilayers grown with and without ZnTe buffer layers on <211> Si substrates by molecular beam epitaxy consist of 422 and 331 reflections. We interpret these as evidence for the existence of twins within the volume of a <211> oriented epilayer and show that twin volume is dependent on the ZnTe buffer layer and substrate misorientation.

Effects of nitrogen impurity on zno crystal growth on Si substrates

MRS Advances ◽  
2019 ◽  
Vol 4 (27) ◽  
pp. 1557-1563
Author(s):  
Soichiro Muraoka ◽  
Lyu Jiahao ◽  
Daisuke Yamashita ◽  
Kunihiro Kamataki ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Smooth Surface ◽  
Buffer Layers ◽  
Zno Films ◽  
Secondary Nucleation ◽  
Rocking Curve ◽  
Si Substrates ◽  
Nitrogen Impurity ◽  
Adsorbed Nitrogen ◽  
Zno Crystal

ABSTRACTEffects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

Effects of Susceptor Geometry on GaN Growth on SI(111) with a New Mocvd Reactor

1998 ◽  
Vol 537 ◽  
Author(s):  
Yungeng Gao ◽  
Daniel A. Gulino ◽  
Ryan Higgins
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Chemical Species ◽  
Buffer Layers ◽  
Structural Quality ◽  
Growth Pressure ◽  
Rocking Curve ◽  
X Ray ◽  
Mocvd Reactor

AbstractHigh quality GaN films on AIN buffer layers were grown on Si(111) with a new, commercial, two-injector vertical rotating disk MOCVD reactor (CVD, Inc.). It was found that the geometry of the susceptor greatly affected the structural quality of the epilayers on Si. For the original susceptor geometry, though single crystal GaN films could be obtained, the films were dark gray in appearance with a rough morphology, and the best x-ray rocking curve FWHM was 2.33°. After modifying the susceptor geometry, transparent, mirror-like single crystal GaN films were obtained with the best x-ray rocking curve FWHM being 0.24°. Photoluminescence (PL) and infrared reflectance (IR) spectra of the grown films were compared. The film growth rate was found to increase with decrease of the growth pressure. A 2-D simulation of the flow, heat transfer, and chemical species transport in the reactor showed a more symmetric flow, larger velocity gradient, and lower upward velocity with the modified susceptor, which may be the main reason for the improvement of the structural quality of the films.

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