Spectroellipsometry characterization of optical quality vapor‐deposited diamond thin films

1991 ◽  
Vol 58 (8) ◽  
pp. 819-821 ◽  
Author(s):  
Yue Cong ◽  
R. W. Collins ◽  
Glenn F. Epps ◽  
H. Windischmann
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


1996 ◽  
Vol 29 (1-3) ◽  
pp. 111-115 ◽  
Author(s):  
M.M.García Poza ◽  
M.Hernández Vélez ◽  
J. Jiménez ◽  
C. Gómez-Aleixandre ◽  
J.Sánchez Olías ◽  
...  

2000 ◽  
Vol 77 (18) ◽  
pp. 2921-2923 ◽  
Author(s):  
N. S. Xu ◽  
J. C. She ◽  
Jian Chen ◽  
S. Z. Deng ◽  
Jun Chen

2009 ◽  
Vol 1 (1) ◽  
pp. 609-613 ◽  
Author(s):  
S. Lani ◽  
C. Ataman ◽  
W. Noell ◽  
D. Briand ◽  
N. de Rooij

2014 ◽  
Vol 21 (7) ◽  
pp. 1395-1400
Author(s):  
KyungNam Kang ◽  
Jeonghwan Kim ◽  
Yoonyoung Jin ◽  
Pratul K. Ajmera

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 216-219
Author(s):  
Kazuhiko KOBAYASHI ◽  
Kunihito IWASHITA ◽  
Masatoshi NOGUCHI ◽  
Takuro KOIKE

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