Decay times of excitons in lattice‐matched InGaAs/InP single quantum wells

1991 ◽  
Vol 58 (9) ◽  
pp. 965-967 ◽  
Author(s):  
I. Brener ◽  
D. Gershoni ◽  
D. Ritter ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Decay Times ◽  
Lattice Matched

Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

1993 ◽  
Vol 63 (1-4) ◽  
pp. 172-176 ◽  
Author(s):  
Y. Baltagi ◽  
S. Monéger ◽  
A. Tabata ◽  
T. Benyattou ◽  
C. Bru ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Single Quantum ◽  
Lattice Matched

Temperature Dependent and Time Resolved Optical Studies of Single Quantum Wells Produced by Interrupted Growth MBE

1986 ◽  
Vol 77 ◽  
Author(s):  
B. S. Elman ◽  
Emil S. Koteles ◽  
C. Jagannath ◽  
Y. J. Chen ◽  
S. Charbonneau ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Molecular Beam Epitaxial ◽  
Decay Times ◽  
Higher Temperature ◽  
The Individual ◽  
Molecular Beam Epitaxial Growth

ABSTRACTMultiple peaks, recently observed in the low temperature photoluminescence (PL) spectra of GaAs/AlGaAs single quantum wells fabricated by momentarily interrupting the molecular beam epitaxial growth between adjacent but different semiconductor layers, have been interpreted as originating within smooth regions in the quantum well layer differing in width by exactly one monolayer. We have observed similar structure in similarly grown samples but find that low temperature PL can be misleading. However, higher temperature PL or PL excitation spectroscopy do provide unambiguous evidence for the model of interface smoothing due to growth interruption. Further, time-resolved spectra yield decay times of the individual peaks which are consistent with this idea.

Optical studies of lattice-matched and strained GaInAs/AlInAs single quantum wells

1992 ◽  
Author(s):  
A. Tabata ◽  
S. Moneger ◽  
Taha Benyattou ◽  
Y. Baltagi ◽  
Gerard Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Optical Studies ◽  
Lattice Matched

Photoreflectance studies of lattice‐matched and strained InGaAs/InAlAs single quantum wells

1993 ◽  
Vol 74 (2) ◽  
pp. 1437-1439 ◽  
Author(s):  
S. Monéger ◽  
Y. Baltagi ◽  
T. Benyattou ◽  
A. Tabata ◽  
B. Ragot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Lattice Matched

InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

2008 ◽  
Vol 55-57 ◽  
pp. 821-824 ◽  
Author(s):  
D. Kaewket ◽  
S. Sanorpim ◽  
Sukkaneste Tungasmita ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Light Emission ◽  
Peak Position ◽  
Conduction Band Edge ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Conduction Band Offset ◽  
Lattice Matched

Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

Photoluminescence Excitation Spectroscopy of Strained Ingaas/GaAs Quantum Wells

1989 ◽  
Vol 160 ◽  
Author(s):  
Emil S. Koteles ◽  
D. Owens ◽  
B. Elman ◽  
P. Melman ◽  
D. Bertolet ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Quantum Wells ◽  
Device Fabrication ◽  
Photoluminescence Excitation ◽  
Single Quantum ◽  
Indium Composition ◽  
Special Sample Preparation ◽  
Lattice Matched ◽  
Processing Steps ◽  
Exciton Transitions

AbstractPhotoluminescence excitation spectroscopy of exciton transitions has been utilized to obtain information about light-holes in strained InGaAs/GaAs single quantum wells. By monitoring their behavior with respect to that of heavy-holes, it was shown possible to ascertain whether or not the quantum wells were pseudomorphic (lattice matched but strained) or relaxed and, if strained, the magnitude of strain present. Thus the indium composition of the single QW layers was deduced. This method is advantageous since it is nondestructive, requires no special sample preparation, is accurate and can readily be extended to monitoring strain in QWs subjected to various processing steps associated with device fabrication.

Optical Properties of Nearly Lattice-matched AlInN/GaN Single Quantum Wells with Varying Well-widths

2006 ◽  
Vol 955 ◽  
Author(s):  
Lay-Theng Tan ◽  
Robert W Martin ◽  
Ian M Watson ◽  
Kevin P O'Donnell
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Transition Energy ◽  
Energy Shift ◽  
Buffer Layers ◽  
Single Quantum ◽  
Free Standing ◽  
Quantum Confined Stark Effect ◽  
Sapphire Substrates ◽  
Lattice Matched

ABSTRACTSingle GaN quantum wells in the nearly lattice-matched GaN/Al1−xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and the underlying GaN buffer layers. The PL spectra show that the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense spontaneous polarization fields, which are present even in the absence of strain in the QW layer. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band gap and enable one to determine the energy shift between emission and absorption in the Al1−xInxN barriers.

Sign in / Sign up

Export Citation Format

Share Document