Designing resonant tunneling structures for increased peak current density

1991 ◽  
Vol 58 (10) ◽  
pp. 1077-1079 ◽  
Author(s):  
C. R. Wie ◽  
Y. W. Choi
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Peak Current Density ◽  
Peak Current

Improving the peak current density of resonant tunneling diode based on InP substrate

2017 ◽  
Vol 38 (6) ◽  
pp. 064005 ◽  
Author(s):  
Zhiqiang Li ◽  
Hailin Tang ◽  
Haitao Liu ◽  
Yi Liang ◽  
Qian Li ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diode ◽  
Inp Substrate

Simulation Design and Device Characteristics of AlAs/GaAs/AlAs Resonant Tunneling Structures with a GalnAs Emitter Spacer Layer

1991 ◽  
Vol 240 ◽  
Author(s):  
Y. W. Choi ◽  
H. M. Kim ◽  
C. R. Wie
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Conduction Band Edge ◽  
Peak Current Density ◽  
Peak Voltage ◽  
Peak Current ◽  
X Ray ◽  
3 Dimensional ◽  
Indium Composition ◽  
Spacer Layer

ABSTRACTElectrical and structural investigation of AlAs/GaAs/AlAs resonant tunneling structures with pseudomorphic strained Ga1−xInxAs (x=0, 0.05, 0.1, 0.15, and 0.2) emitter spacer layer are presented. As indium composition increased, the peak current density, peak voltage, and peak to valley ratio increased. For a theoretical understanding of these increases, a self-consistent simulation was employed. In the simulation, we treated the 2-dimensional electrons confined in the low energy bandgap GalnAs emitter spacer well as pseudo-3-dimensional electrons, distributed continuously down to the emitter launching energy. In the simulation, we used the bottom energy of the pseudo-3-dimensional electrons to be ⅔δEc below the emitter conduction band edge. Using the above values, an excellent agreement of peak current density and peak voltage between the experiment and the simulation was achieved. Also, for structural identification, standard double crystal x-ray rocking curve technique has been used. From the interference analysis of the x-ray results, we could obtain the indium composition times thickness product.

High Speed InAs/AlSb and In0.53Ga0.47As/AlAs Resonant Tunneling Diodes

1992 ◽  
Vol 281 ◽  
Author(s):  
D. H. Chow ◽  
J. N. Schulman ◽  
E. ÖZBAY ◽  
D. M. Bloom
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Speed ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Switching Speed ◽  
Tunneling Model ◽  
Band Bending ◽  
Peak Current ◽  
Tunneling Diodes

ABSTRACTWe report a comparison of InAs/AlSb and In0.53Ga0.47As/AlAs resonant tunneling diodes (RTDs) for high speed switching applications. Theoretical simulations are performed for both heterostructure systems using a two band tunneling model, which includes the effects of strain and band bending. Experimental peak current densities are observed to agree well with the calculated values over the range 1×104 A/cm2 to 5× 105 A/cm2. In both types of structures, the maximum peak current density (directly related to switching speed) is determined by device heating. In this regard, InAs/AlSb RTDs are found to be slightly superior to In0.53Ga0.47As/AlAs RTDs due to the low contact and series resistances of InAs. However, higher peak-to-valley ratios and swing voltages are obtained in the In0.53Ga0.47As/AlAs devices up to their maximum attainable peak current density (3.1×105 A/cm2 in this study). Both heterostructure systems yield RTDs with estimated switching times near 1 ps.

scholarly journals Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055307 ◽  
Author(s):  
Evan M. Cornuelle ◽  
Tyler A. Growden ◽  
David F. Storm ◽  
Elliott R. Brown ◽  
Weidong Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Current Density ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diodes

THE EFFECT OF PREPARED PARAMETERS ON THE MICROSTRUCTURE OF ELECTRODEPOSITED NANOCRYSTALLINE NICKEL COATING

2004 ◽  
Vol 11 (04n05) ◽  
pp. 433-442 ◽  
Author(s):  
C. Y. DAI ◽  
Y. PAN ◽  
S. JIANG ◽  
Y. C. ZHOU
Keyword(s):  
Grain Size ◽  
Surface Morphology ◽  
Current Density ◽  
Crystal Orientation ◽  
Nickel Coating ◽  
Pulse Frequency ◽  
Lattice Parameter ◽  
Nanocrystalline Nickel ◽  
Peak Current Density ◽  
Peak Current

The nanocrystalline nickel coating was synthesized by pulse-jet electrodeposition from modified Watts bath. Pulse and jet plating was employed to increase the deposition current density, decrease diffusion layer, increase the nucleation rate and in this case the prepared method would result in fine-grained deposits. Transmission and scanning electron microscopy and X-ray diffraction (XRD) were used to study the microstructure, the surface morphology, the crystal preferred orientation and the variety of the lattice parameter respectively. The influence of pulse parameters, namely peak current density, the duty cycle and pulse frequency on the grain size, surface morphology, crystal orientation and microstructure was studied. The results showed that with increasing peak current density, the deposit grain size was found to decrease markedly in other parameters at constant. However, in our experiment it was found that the grain size increased slightly with increasing pulse frequency. For higher peak current density, the surface morphology was smoother. The crystal orientation progressively changed from an almost random distribution to a strong (111) texture. This means that the peak current density was the dominated parameter to effect the microstructure of electrodeposited nanocrystalline nickel coating. In addition, the lattice parameter for the deposited nickel is calculated from XRD and it is found that the calculated value is less than the lattice parameter for the perfect nickel single crystal. This phenomenon is explained by the crystal lattice mismatch.

Microstructure Evolution of As-Cast Nickel Aluminum Bronze under Electropulsing

2020 ◽  
Vol 861 ◽  
pp. 28-34
Author(s):  
Jie Fang ◽  
Guo Lin Song ◽  
Wei Liu ◽  
Qiu Lin Li
Keyword(s):  
Microstructure Evolution ◽  
Current Density ◽  
Phase Region ◽  
Aluminum Bronze ◽  
Nickel Aluminum ◽  
Peak Current Density ◽  
Peak Current ◽  
Β Phase ◽  
Nickel Aluminum Bronze ◽  
Electropulsing Treatment

In this work, the microstructure evolution of as-cast NAB under different electropulsing parameters were studied. The microstructure of the electropulsing treatment (EPT) sample was characterized by mircohardness test and optical microscopy. The results show that compared with heat treatment, when the peak current density reaches 5.84×108A/m2 (no significant change in the structure when the peak current density is lower), the β' phase region undergo phase transition in a shorter time. When the peak current density reaches 7.25×108A/m2, the sample is significantly affected by the Joule heating effect, and the κⅢ and κⅣ phases are successively dissolved to form Widmanstätten α structure. As the β' phase increases and the Widmanstätten α structure forms, the hardness value of the microstructure increases by 80%.

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