InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers

1991 ◽  
Vol 58 (13) ◽  
pp. 1366-1368 ◽  
Author(s):  
T. K. Woodward ◽  
Theodore Sizer ◽  
T. H. Chiu
Keyword(s):  
Solid State ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Solid State Lasers ◽  
Optical Modulators

Design of InGaAs-InAlAs multiple-quantum-well (MQW) optical modulators

1992 ◽  
Vol 28 (1) ◽  
pp. 224-230 ◽  
Author(s):  
K. Kawano ◽  
K. Wakita ◽  
O. Mitomi ◽  
I. Kotaka ◽  
M. Naganuma
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators

Comparison of stepped‐well and square‐well multiple‐quantum‐well optical modulators

1995 ◽  
Vol 78 (3) ◽  
pp. 1411-1414 ◽  
Author(s):  
T. K. Woodward ◽  
J. E. Cunningham ◽  
W. Y. Jan
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Square Well

MOCVD growth of InxGa1−xAs/GaAs multiple quantum well and superlattice structures for optical modulators

1998 ◽  
Vol 42 (2) ◽  
pp. 263-267 ◽  
Author(s):  
S Hasenöhrl ◽  
M Kučera ◽  
J Novák ◽  
M Bujdák ◽  
P Eliáš ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Mocvd Growth ◽  
Superlattice Structures

Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz

1991 ◽  
Vol 3 (2) ◽  
pp. 138-140 ◽  
Author(s):  
K. Wakita ◽  
I. Kotaka ◽  
O. Mitomi ◽  
H. Asai ◽  
Y. Kawamura
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Chirp Modulation

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

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