Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

1990 ◽  
Vol 57 (7) ◽  
pp. 698-700 ◽  
Author(s):  
J. Kanicki ◽  
M. Sankaran ◽  
A. Gelatos ◽  
M. S. Crowder ◽  
E. D. Tober
Keyword(s):  
Silicon Nitride ◽  
Time Dependence ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Stretched Exponential

The Generation and Bleaching of Positive Charge in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride By Sub-Bandgap Illumination

1990 ◽  
Vol 192 ◽  
Author(s):  
J. Kanicki ◽  
M. Sankaran
Keyword(s):  
Silicon Nitride ◽  
Time Dependence ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Positive Charge ◽  
Amorphous Silicon Nitride ◽  
Exponential Time ◽  
Stretched Exponential ◽  
Silicon Nitride Films ◽  
First Time

ABSTRACTWe report, for the first time, on the stretched-exponential time dependence of the generation and bleaching of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to the sub-bandgap illumination at room temperature in vacuum. We also propose a mechanism which we believe is responsible for the generation and bleaching of the positive charge in the nitride films.

Influence of the Gate Bias and Temperature on Positive Charge Generation in TFT Gate-Quality Amorphous Silicon Nitride Films

1991 ◽  
Vol 219 ◽  
Author(s):  
Jerzy Kanicki ◽  
Mythili Sankaran
Keyword(s):  
Silicon Nitride ◽  
Film Thickness ◽  
Charge Transport ◽  
Amorphous Silicon ◽  
Positive Charge ◽  
Gate Bias ◽  
Charge Generation ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films

ABSTRACTWe report on the illumination time dependence of the generation of positive charge in gate-quality nitrogen-rich amorphous silicon nitride films subjected to sub-bandgap illumination at different temperature in vacuum. The influence of film thickness and gate bias applied during illumination on the generation of positive charge is also described. We have found that a stretched-exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results.

Light-Induced Electron Spin Resonance in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride: Photo-Production and Photo-Bleaching

1990 ◽  
Vol 192 ◽  
Author(s):  
E. D. Tober ◽  
M. S. Crowder ◽  
J. Janicki
Keyword(s):  
Electron Spin Resonance ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Monochromatic Light ◽  
Resonance Spectroscopy ◽  
Illumination Time ◽  
Amorphous Silicon Nitride ◽  
Spin Resonance ◽  
Photo Production

ABSTRACTElectron spin resonance spectroscopy is used to monitor the light-induced, paramagnetic (neutral) defect density in gate-quality nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) thin films. A new phenomenon has been observed in which the light-induced electron spin resonance (LESR) signal can be reduced (photo-bleached) by re-illuminating with monochromatic light. The extent to which the LESR signal is bleached depends strongly upon the incident photon energy used for re-illumination. Photo-bleaching as well as the photo-production of the LESR signal follow a stretched exponential dependence upon illumination time.

scholarly journals Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride (a−SiNx:H)

2021 ◽  
Vol 5 (3) ◽  
Author(s):  
Jeffrey L. Braun ◽  
Sean W. King ◽  
Eric R. Hoglund ◽  
Mehrdad Abbasi Gharacheh ◽  
Ethan A. Scott ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vibrational Modes ◽  
Amorphous Silicon Nitride

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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