Properties and thermal stability of the SiO2/GaAs interface with different surface treatments

1990 ◽  
Vol 57 (3) ◽  
pp. 258-260 ◽  
Author(s):  
A. Paccagnella ◽  
A. Callegari ◽  
J. Batey ◽  
D. Lacey
2000 ◽  
Vol 9 (4) ◽  
pp. 096369350000900 ◽  
Author(s):  
N. E. Zafeiropoulos ◽  
C. A. Baillie ◽  
F. L. Matthews

There is an increasing interest in using natural fibres as reinforcing agents in composites. These fibres are considered to be a potential candidate to replace glass fibres in certain applications of composites. They have a number of advantages over glass fibres such as lower cost, lower density, non toxicity, re cycle ability and they are easier to process. However, natural fibres are not heat resistant like glass fibres and therefore they cannot be used with all polymer matrices. Furthermore, natural fibres are hydrophilic materials that do not adhere very well with most polymer matrices that are hydrophobic. Surface treatments are usually employed to improve adhesion in natural fibre composites. Nevertheless, the effect of these treatments upon the thermal stability of natural fibres has not been addressed sufficiently. In this letter seven grades of flax fibres were studied recently to determine their thermal stability profiles for potential use as reinforcements in composite materials. The results indicate that treated flax performs better than untreated flax. Acetylation and stearic acid treatments were found to increase the thermal stability of flax. Duralin flax was found to be sufficiently heat resistant to be usable with thermoplastics such as nylon 6, where the processing temperature is higher than it is for polyolefin matrices.


2021 ◽  
Vol 52 (6) ◽  
pp. 603-616
Author(s):  
A. Buchwalder ◽  
J. Thronicke ◽  
A. Holst ◽  
P. Hollmann ◽  
P. Hengst ◽  
...  

Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

2016 ◽  
Vol 38 (3) ◽  
pp. 211-217
Author(s):  
G.I. Khovanets’ ◽  
◽  
O.Y. Makido ◽  
V.V. Kochubey ◽  
Y.G. Medvedevskikh ◽  
...  

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