Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy

1990 ◽  
Vol 57 (20) ◽  
pp. 2065-2067 ◽  
Author(s):  
W. T. Tsang ◽  
M. C. Wu ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
S. N. G. Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Power Output ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Laser ◽  
High Power Output ◽  
Low Threshold ◽  
Multiple Quantum Well Laser

A new InGaAs/InGaAsP delta -strained multiple-quantum-well laser grown by chemical-beam epitaxy

1991 ◽  
Vol 3 (5) ◽  
pp. 430-432
Author(s):  
L. Yang ◽  
M.C. Wu ◽  
Y.K. Chen ◽  
W.T. Tsang ◽  
S.N.G. Chu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure

1996 ◽  
Vol 35 (Part 2, No. 4B) ◽  
pp. L493-L495 ◽  
Author(s):  
Toru Takayama ◽  
Osamu Imafuji ◽  
Tadaro Hashimoto ◽  
Masaaki Yuri ◽  
Akio Yoshikawa ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser ◽  
Real Refractive Index

High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser

1992 ◽  
Vol 72 (9) ◽  
pp. 4447-4448 ◽  
Author(s):  
K. Mobarhan ◽  
M. Razeghi ◽  
G. Marquebielle ◽  
E. Vassilaki
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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