Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode

1990 ◽  
Vol 57 (6) ◽  
pp. 575-577 ◽  
Author(s):  
C. R. Bolognesi ◽  
R. S. Mand ◽  
A. R. Boothroyd
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Optical Phonon ◽  
Resonant Tunneling ◽  
Longitudinal Optical ◽  
Resonant Tunneling Diode ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Tunneling Diode

scholarly journals Computerized Fdtd Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication

2021 ◽  
Vol 3 (2) ◽  
Author(s):  
Phyo Sandar Win ◽  
Hsu Myat Tin Swe ◽  
Hla Myo Tun
Keyword(s):  
Optical Phonon ◽  
High Performance ◽  
Lattice Vibration ◽  
Longitudinal Optical ◽  
Phonon Energy ◽  
Longitudinal Optical Phonon ◽  
Semiconductor Interface ◽  
Electric Dipoles ◽  
Polarization Of Light ◽  
Transmission And Reflection

The research problem in this study is the longitudinal optical phonon energy on metal/semiconductor interface for high performance semiconductor device. The research solution is to make the software model with finite difference time domain (FDTD) solution for transmission and reflection pulse between metal and semiconductor interface for carrier dynamics effects. The objective of this study is to find the quantum mechanics understanding on interface engineering for fabricating the high performance device for future semiconductor technology development. The analysis was carried out with the help of MATLAB. The quantum mechanical spatial field on metal-semiconductor stripe structure have been analyzed by FDTD techniques. This emission reveals a characteristic polar radiation distribution of electric dipoles and a wavelength independent of the structure size or the direction of emission; consequently, it is attributed to thermally generate electric dipoles resonating with the longitudinal optical phonon energy. Phonon energy occur lattice vibration of material by the polarization of light, if the material has rigid structure reflect back the incident light. So, high reflective metal- semiconductor structure always use as photodectors devices in optical fiber communication. No lattice vibration material structure has no phonon effect, so this structure based devices can get high performance any other structure based devices. The transmission and reflection coefficient of metal-semiconductor GaN/Au layer structure compare with GaN/Ti and GaN/Pt structure. Parallel (P) and transverse (S) polarization of light incident on metal-semiconductor nanolayer structure with IR wavelength. Efficient use of the layer by layer (LbL) method to fabricate nanofilms requires meeting certain conditions and limitations that were revealed in the course of research on model systems.

Improving the peak current density of resonant tunneling diode based on InP substrate

2017 ◽  
Vol 38 (6) ◽  
pp. 064005 ◽  
Author(s):  
Zhiqiang Li ◽  
Hailin Tang ◽  
Haitao Liu ◽  
Yi Liang ◽  
Qian Li ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diode ◽  
Inp Substrate

scholarly journals Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 83-86 ◽  
Author(s):  
J. P. Sun ◽  
G. I. Haddad
Keyword(s):  
Transverse Momentum ◽  
Optical Phonon ◽  
Resonant Tunneling ◽  
Optical Model ◽  
Phonon Scattering ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Optical Phonon Scattering ◽  
Self Consistent ◽  
Self Consistency

We perform a self-consistent calculation of resonant tunneling diode (RTD) I-V characteristics including optical phonon scattering. The self-consistency is obtained by solving the Schrödinger equation and Poisson’s equation iteratively with the Thomas-Fermi approximation used for the device contact regions. For evaluation of phonon-assisted current density, the optical phonon scattering in the quantum well is modeled using the optical model potential. Electron transverse momentum is also incorporated. The calculated current and electron wavefunction illustrate the optical model and effects of the phonon scattering on the current transport. The I-V characteristics we obtain from the model calculation are in good agreement with experimental results. This work manifests the importance of including self-consistency, optical phonon scattering, and electron transverse momentum in modeling realistic RTD structures.

scholarly journals A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications

2015 ◽  
Vol 36 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
K. J. P. Jacobs ◽  
B. J. Stevens ◽  
O. Wada ◽  
T. Mukai ◽  
D. Ohnishi ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Current Density ◽  
Terahertz Wave ◽  
Resonant Tunneling Diode ◽  
High Current ◽  
Tunneling Diode ◽  
Dual Pass
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