Tight‐binding analysis of the conduction‐band structure in quantum wires

1990 ◽  
Vol 57 (12) ◽  
pp. 1224-1226 ◽  
Author(s):  
T. Yamauchi ◽  
Y. Arakawa ◽  
J. N. Schulman
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Quantum Wires ◽  
Tight Binding ◽  
Binding Analysis

Quantum wires with strain effect: Tight-binding analysis

1992 ◽  
Vol 267 (1-3) ◽  
pp. 291-295 ◽  
Author(s):  
T. Yamauchi ◽  
Y. Arakawa ◽  
J.N. Schulman
Keyword(s):  
Quantum Wires ◽  
Tight Binding ◽  
Strain Effect ◽  
Binding Analysis

Tight-binding analysis of energy-band structures in quantum wires

1991 ◽  
Vol 43 (6) ◽  
pp. 4732-4738 ◽  
Author(s):  
Y. Arakawa ◽  
T. Yamauchi ◽  
J. N. Schulman
Keyword(s):  
Energy Band ◽  
Quantum Wires ◽  
Tight Binding ◽  
Band Structures ◽  
Binding Analysis

Conduction Band Structure of Tellurium

1973 ◽  
Vol 35 (2) ◽  
pp. 525-533 ◽  
Author(s):  
Hitoshi Shinno ◽  
Ryozo Yoshizaki ◽  
Shoji Tanaka ◽  
Takao Doi ◽  
Hiroshi Kamimura
Keyword(s):  
Band Structure ◽  
Conduction Band

The electronic properties of (methylxguanidinium)[Ni(dmit)2]2. A two-orbital tight-binding analysis

1996 ◽  
Vol 97 (9) ◽  
pp. 737-740 ◽  
Author(s):  
P.M. Paulus ◽  
H.B. Brom ◽  
Y.S.J. Veldhuizen ◽  
W.J.A. Maaskant
Keyword(s):  
Electronic Properties ◽  
Tight Binding ◽  
Binding Analysis

Empirical tight-binding band structure of zinc-blende nitrides GaN, AIN, and BN

1996 ◽  
Vol 195 (2) ◽  
pp. 415-424 ◽  
Author(s):  
M. Ferhat ◽  
A. Zaoui ◽  
M. Certier ◽  
B. Khelifa
Keyword(s):  
Band Structure ◽  
Tight Binding ◽  
Zinc Blende

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

The gunn effect and conduction band structure in GaxIn1−xSb alloys

1969 ◽  
Vol 7 (13) ◽  
pp. 901-903 ◽  
Author(s):  
J.C. McGroddy ◽  
M.R. Lorenz ◽  
T.S. Plaskett
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Gunn Effect
Sign in / Sign up

Export Citation Format

Share Document