Location of energy levels of oxygen‐vacancy complex in GaAs

1990 ◽  
Vol 57 (9) ◽  
pp. 902-904 ◽  
Author(s):  
M. Skowronski ◽  
S. T. Neild ◽  
R. E. Kremer
Keyword(s):  
Oxygen Vacancy ◽  
Energy Levels ◽  
Vacancy Complex

scholarly journals Oxygen-vacancy complex in silicon. II.O17electron-nuclear double resonance

1989 ◽  
Vol 40 (6) ◽  
pp. 4054-4061 ◽  
Author(s):  
R. van Kemp ◽  
M. Sprenger ◽  
E. G. Sieverts ◽  
C. A. J. Ammerlaan
Keyword(s):  
Oxygen Vacancy ◽  
Double Resonance ◽  
Vacancy Complex

Local vibrational modes of the oxygen-vacancy complex in germanium

2002 ◽  
Vol 36 (6) ◽  
pp. 621-624 ◽  
Author(s):  
V. V. Litvinov ◽  
L. I. Murin ◽  
J. L. Lindstrom ◽  
V. P. Markevich ◽  
A. N. Petukh
Keyword(s):  
Oxygen Vacancy ◽  
Vibrational Modes ◽  
Vacancy Complex ◽  
Local Vibrational Modes

Influence of Oxygen‐Vacancy Complex (A Center) on Piezoresistance of n‐Type Silicon

1972 ◽  
Vol 43 (3) ◽  
pp. 1074-1085 ◽  
Author(s):  
M. A. Littlejohn ◽  
C. D. Loggins
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Complex ◽  
Type Silicon

Structure determination of an indium-oxygen-vacancy complex in silver

1987 ◽  
Vol 35 (1-4) ◽  
pp. 623-626 ◽  
Author(s):  
D. Wegner ◽  
H. Schröder ◽  
W. Bolse ◽  
M. Uhrmacher ◽  
K. P. Lieb
Keyword(s):  
Oxygen Vacancy ◽  
Structure Determination ◽  
Vacancy Complex

First-principles study of Oxygen deficiency in rutile Titanium Dioxide

2011 ◽  
Vol 1352 ◽  
Author(s):  
Hsin-Yi Lee ◽  
Stewart J. Clark ◽  
John Robertson
Keyword(s):  
Oxygen Vacancy ◽  
Band Gap ◽  
Defect Formation ◽  
Chemical Potential ◽  
Oxygen Deficiency ◽  
Energy Levels ◽  
Hybrid Functional ◽  
Charge Densities ◽  
Screened Exchange ◽  
Rutile Titanium Dioxide

ABSTRACTThe energy levels of the different charge states of an oxygen vacancy and titanium interstitial in rutile TiO2 were calculated using the screened exchange (sX) hybrid functional [1]. The sX method gives 3.1 eV for the band gap of rutile TiO2, which is close to the experimental value. We report the defect formation energy of the oxygen deficient structure. It is found that the defect formation energies, for the neutral charge state, of oxygen vacancy and titanium interstitial are quite similar, 2.40 eV and 2.45 eV respectively, for an oxygen chemical potential of the O-poor condition. The similar size of these two calculated energies indicates that both are a cause of oxygen deficiency, as observed experimentally [2]. The transition energy level of oxygen vacancy lies within the band gap, corresponding to the electrons located at adjacent titanium sites. The sX method gives a correct description of the localization of defect charge densities, which is not the case for GGA [3-6].

scholarly journals Oxygen-vacancy complex in silicon. I.Si29electron-nuclear double resonance

1989 ◽  
Vol 40 (6) ◽  
pp. 4037-4053 ◽  
Author(s):  
R. van Kemp ◽  
E. G. Sieverts ◽  
C. A. J. Ammerlaan
Keyword(s):  
Oxygen Vacancy ◽  
Double Resonance ◽  
Vacancy Complex

The Electronic Structure of the Oxygen-Vacancy Complex in Silicon

1986 ◽  
Vol 10-12 ◽  
pp. 875-880 ◽  
Author(s):  
R. Van Kemp ◽  
E.G. Sieverts ◽  
C.A.J. Ammerlaan
Keyword(s):  
Electronic Structure ◽  
Oxygen Vacancy ◽  
Vacancy Complex
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