Insitusingle chamber laser processing of YBa2Cu3O7−δsuperconducting thin films on Si (100) with yttria‐stabilized zirconia buffer layers

1990 ◽  
Vol 57 (15) ◽  
pp. 1578-1580 ◽  
Author(s):  
P. Tiwari ◽  
S. M. Kanetkar ◽  
S. Sharan ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Laser Processing ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia

Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
A. Morimoto ◽  
V.N. Shukla ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Processing Parameters ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Pzt Films ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

Growth of YBa2Cu3O7-x Thin Films on R-Plane Sapphire (O112) Using Yttria Stabilized Zirconia (YSZ) Buffer Layers

1991 ◽  
Vol 79-82 ◽  
pp. 941-946
Author(s):  
K. Hradil ◽  
Harald Schmidt ◽  
W. Hösler ◽  
W. Wersing ◽  
F. Frey ◽  
...  
Keyword(s):  
Thin Films ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia

Ferroelectric Properties of Epitaxial BiFe0.97Mn0.03O3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

2009 ◽  
Vol 421-422 ◽  
pp. 111-114
Author(s):  
Hyun Young Go ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Tomohiko Yoshioka ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Ferrite ◽  
Ferroelectric Properties ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Stabilized Zirconia ◽  
Si Substrates ◽  
Crystal Orientations ◽  
Mn Doped

We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

Textured Pb(Zr0.54Ti0.46)O3 Thin Films with YBa2Cu3O7-δ and Yttria-Stabilized Zirconia Buffer Layers on (001)Si

1993 ◽  
Vol 310 ◽  
Author(s):  
Tsvetanka Zheleva ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Stabilized Zirconia ◽  
X Ray

AbstractCharacteristics of textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with YBa2Cu3O7-δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers have been studied using X-ray diffraction and high resolution electron microscopy techniques. Excimer KrF laser has been used for deposition of PZT, YBCO and YSZ thin films. The YBCO layer was utilized to provide a seed for PZT growth, while YSZ layer acted as a seed and a buffer layer for the growth of YBCO on (001)Si. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction were used to determine the texture and the nature of defects, interfaces and grain boundaries. Predominant orientation relationships were found to be [001]PZT//[001]YBCO; [001]YBCO//[001]YSZ; and [001]YSZ//[001]Si.

Epitaxial Growth of GdBa2Cu3O7-x Thin Films on Yttria-Stabilized Zirconia Buffer Layers

1992 ◽  
pp. 701-706
Author(s):  
M. Siegel ◽  
F. Wang ◽  
R. Smithey ◽  
U. Kaufmann ◽  
G. Linker ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia

Electrochemical behavior of silver thin films interfaced with yttria-stabilized zirconia

2014 ◽  
Vol 18 (8) ◽  
pp. 2267-2277 ◽  
Author(s):  
Michèle Fee ◽  
Spyridon Ntais ◽  
Arnaud Weck ◽  
Elena A. Baranova
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Silver Thin Films
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