Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition

1990 ◽  
Vol 56 (10) ◽  
pp. 907-909 ◽  
Author(s):  
Chiharu Isobe ◽  
Masaki Saitoh
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Oxide Thin Films

Self-limiting growth of tantalum oxide thin films by pulsed plasma-enhanced chemical vapor deposition

2007 ◽  
Vol 90 (13) ◽  
pp. 131504 ◽  
Author(s):  
Michael Seman ◽  
Joshua J. Robbins ◽  
Sumit Agarwal ◽  
Colin A. Wolden
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Oxide Thin Films

Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Pressure Chemical

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

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