scholarly journals Scanning tunneling microscopy imaging of transition‐metal dichalcogenides

1990 ◽  
Vol 56 (24) ◽  
pp. 2402-2404 ◽  
Author(s):  
G. P. E. M. van Bakel ◽  
J. Th. M. De Hosson ◽  
T. Hibma
Keyword(s):  
Transition Metal ◽  
Scanning Tunneling Microscopy ◽  
Transition Metal Dichalcogenides ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Microscopy Imaging ◽  
Metal Dichalcogenides

A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY

2018 ◽  
Vol 25 (Supp01) ◽  
pp. 1841002
Author(s):  
MAOHAI XIE ◽  
JINGLEI CHEN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transition Metal ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Transition Metal Dichalcogenide ◽  
Tunneling Microscopy

This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

RECENT DEVELOPMENTS IN ALKALI METAL INTERCALATION OF LAYERED TRANSITION METAL DICHALCOGENIDES

2000 ◽  
Vol 14 (13) ◽  
pp. 455-471 ◽  
Author(s):  
H. I. STARNBERG
Keyword(s):  
Transition Metal ◽  
Photoelectron Spectroscopy ◽  
Alkali Metals ◽  
Transition Metal Dichalcogenides ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Recent Developments ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal

The modification of layered transition metal dichalcogenides through intercalation is reviewed, with special emphasis on in situ intercalation with alkali metals. Experimental results obtained using photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and transmission electron microscopy are presented, and conclusions about the in situ intercalation process and the associated crystallographic and electronic structure changes are presented. It is stressed that various kinds of defects and disorders must be taken into account for a full understanding.

STM Tip-Induced Switching in Molybdenum Disulfide-Based Atomristors

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2609-2617 ◽  
Author(s):  
Jesse E. Thompson ◽  
Brandon T. Blue ◽  
Darian Smalley ◽  
Fernand Torres-Davila ◽  
Laurene Tetard ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal ◽  
Molybdenum Disulfide ◽  
Transition Metal Dichalcogenides ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Exfoliated Graphene ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides

ABSTRACTScanning tunneling microscopy and spectroscopy (STM/STS) are used to electronically switch atomically-thin memristors, referred to as “atomristors”, based on a graphene/molybdenum disulfide (MoS2)/Au heterostructure. A gold-assisted exfoliation method was used to produce near-millimeter (mm) scale MoS2 on Au thin-film substrates, followed by transfer of a separately exfoliated graphene top layer. Our results reveal that it is possible to switch the conductivity of a graphene/MoS2/Au memristor stack using an STM tip. These results provide a path to further studies of atomically-thin memristors fabricated from heterostructures of two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs).

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