X‐ray analysis of GaAs surface reconstructions in H2and N2atmospheres

1990 ◽  
Vol 56 (20) ◽  
pp. 2025-2027 ◽  
Author(s):  
D. W. Kisker ◽  
P. H. Fuoss ◽  
K. L. Tokuda ◽  
G. Renaud ◽  
S. Brennan ◽  
...  
Keyword(s):  
Gaas Surface ◽  
X Ray ◽  
Surface Reconstructions

SURFACE STRUCTURE OF O/Cu(104) FACETS DETERMINED BY X-RAY DIFFRACTION

1999 ◽  
Vol 06 (05) ◽  
pp. 851-857 ◽  
Author(s):  
D. A. WALKO ◽  
I. K. ROBINSON
Keyword(s):  
Surface Structure ◽  
Clean Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adsorption Sites ◽  
Text Structures ◽  
Surface Reconstructions ◽  
The Relationship

We have determined the surface structure of O/Cu(104) using X-ray diffraction. This surface was prepared by dosing Cu(115) with oxygen, transforming the clean surface into facets with {104} and {113} orientations. This method of preparation, in essence, naturally grows the (104)-oriented substrate concurrent with the O-covered surface, resulting in O/Cu(104) facets which are smooth and highly ordered. Our results indicate that the top three atomic rows significantly expand away from the bulk, but no Cu rows are missing. The Cu–O structures of this surface are similar to those present on other O on Cu surface reconstructions, but the adsorbed O inhabits two adsorption sites with notably distinct geometries. The relationship between the O/Cu(104) and O/Cu(001)[Formula: see text] structures, in particular, is discussed.

Characterization of GaAs Surface State by Hard X-ray Photoemission Spectroscopy

2014 ◽  
Author(s):  
Y. Saito ◽  
J. Iihara ◽  
T. Yonemura ◽  
K. Yamaguchi ◽  
D. Tsurumi
Keyword(s):  
Surface State ◽  
Gaas Surface ◽  
Photoemission Spectroscopy ◽  
X Ray

GaAs surface states observed by x‐ray photoemission

1979 ◽  
Vol 16 (5) ◽  
pp. 1300-1301 ◽  
Author(s):  
R. Ludeke ◽  
L. Ley
Keyword(s):  
Surface States ◽  
Gaas Surface ◽  
X Ray

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Quality through a Novel Sulfuration Method

2011 ◽  
Vol 287-290 ◽  
pp. 2327-2331
Author(s):  
Ge Ming Tan ◽  
Qing Qing Sun ◽  
Hong Liang Lu ◽  
Peng Fei Wang ◽  
Shi Jin Ding ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Oxide Thickness ◽  
Gaas Surface ◽  
Interface Quality ◽  
Mos Capacitors ◽  
X Ray ◽  
Native Oxides ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Elemental Arsenic

The absence of stable oxide/GaAs interface greatly holds back the step of GaAs-based MOSFETs fabrication. In this letter, we report on the chemical passivation of n-type GaAs surface by introducing a new sulfuration method. X-ray photon-electron spectroscopy (XPS) analyses indicate that most GaAs native oxides and elemental arsenic (As) can be more effectively removed by treating the GaAs surface in CH3CSNH2solution compared to the traditional (NH4)2S solution. Capacitance-Voltage characteristics of the CH3CSNH2treated MOS capacitors also presents reduced interfacial layer and equivalent oxide thickness which are well consisted with the conclusion obtained by XPS.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System

1990 ◽  
Vol 181 ◽  
Author(s):  
K. Wuyts ◽  
G. Langouche ◽  
H. Vanderstraeten ◽  
R.E. Silverans ◽  
M. Van Hove ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Ohmic Contacts ◽  
Conduction Mechanism ◽  
Gaas Surface ◽  
Ohmic Conduction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Metal ◽  
Ohmic Contact Formation ◽  
Contact Resistivities

ABSTRACTAlloyed Au/Te/n–GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mässbauer spectroscopy, Raman scattering and X-Ray Diffraction. The formation of Au-doped Ga2Te3 crystallites, grown epitaxially on a defectively GaAs surface was observed. No evidence for the formation of an n++–GaAs surface layer could be derived. The interpretation of all experimental results leads to a description of the ohmic conduction mechanism based on a resonant tunneling process assisted by defect/impurity related deep levels through low barrier metal/Te/(Au)Ga2Te3/GaAs interfaces

scholarly journals Biofunctionalisation of Gallium Arsenide with Neutravidin

2021 ◽  
Author(s):  
Barbara Santos Gomes ◽  
David Morgan ◽  
Wolfgang Langbein ◽  
Paola Borri ◽  
Francesco Masia
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Photoelectron Spectroscopy ◽  
Specific Binding ◽  
Gaas Surface ◽  
Biomolecular Recognition ◽  
Surface Characterisation ◽  
X Ray ◽  
High Affinity ◽  
Surface Functionalisation ◽  
New Generation

<div>We report a study presenting a physicochemical surface characterisation of the GaAs surface along the functionalisation with a high-affinity bioconjugation pair widely explored in the life</div><div>sciences: biotin and neutravidin. Combined X-ray photoelectron spectroscopy (XPS), wettability measurements and spectroscopic ellipsometry were used for a reliable characterisation of the surface functionalisation process. The results suggest that a film with a thickness lower than 10nm was formed, with a neutravidin to biotin ratio of 1:25 on the GaAs surface. Reduction of non-specific binding of the protein to the surface was achieved by optimising the protein buffer and rinsing steps. This study shows the feasibility of using GaAs as a platform for specific biomolecular recognition, paving the way to a new generation of optoelectronic biosensors.</div>

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