Quantum‐confined field‐effect wavelength tuning in a three‐terminal double quantum well laser

1990 ◽  
Vol 56 (23) ◽  
pp. 2282-2284 ◽  
Author(s):  
F. Y. Huang
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Wavelength Tuning ◽  
Double Quantum ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Quantum Confined

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

2003 ◽  
Vol 94 (5) ◽  
pp. 3556-3562 ◽  
Author(s):  
V. V. Popov ◽  
O. V. Polischuk ◽  
T. V. Teperik ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor ◽  
Plasmon Modes

ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

2002 ◽  
Vol 12 (03) ◽  
pp. 925-937 ◽  
Author(s):  
X. G. PERALTA ◽  
S. J. ALLEN ◽  
M. C. WANKE ◽  
N. E. HARFF ◽  
M. P. LILLY ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Thz Radiation ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Field Effect Devices ◽  
Effect Transistor

We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.

Quantum Effects in the Capacitance of Field-Effect Transistors with a Double Quantum Well

JETP Letters ◽  
2019 ◽  
Vol 110 (6) ◽  
pp. 424-429 ◽  
Author(s):  
A. A. Kapustin ◽  
S. I. Dorozhkin ◽  
I. B. Fedorov ◽  
V. Umansky ◽  
J. H. Smet
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Quantum Effects ◽  
Double Quantum ◽  
Double Quantum Well

Doping-Dependent Nonlinear Electron Mobility in GaAs|In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-As Coupled Quantum-Well Pseudo-Morphic MODFET Structure

2020 ◽  
Vol 54 (7) ◽  
pp. 676
Author(s):  
S.R. Panda ◽  
A. Sahu ◽  
S. Das ◽  
A.K. Panda ◽  
T. Sahu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Interface Roughness ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Alloy Disorder

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of GaAs|InxGa1-xAs double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate μ for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as Nd1 and Nd2, respectively, we show that variation of Nd1 leads to a dip in μ near Nd1=Nd2, at which the resonance of the sub-band states occurs. A similar dip in μ as a function of Nd1 is also obtained at Nd1=Nd2 by keeping (Nd1+Nd2) unchanged. By increasing the central barrier width and well width, the dip in μ becomes sharp. We note that even though the overall μ is governed by the IMP- and AL-scatterings, the dip in μ is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|InxGa1-xAs structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.

Simulation and optimization of deep violet InGaN double quantum well laser

2012 ◽  
Vol 285 (5) ◽  
pp. 746-750 ◽  
Author(s):  
Gh. Alahyarizadeh ◽  
A.J. Ghazai ◽  
R. Rahmani ◽  
H. Mahmodi ◽  
Z. Hassan
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Simulation And Optimization ◽  
Quantum Well Laser ◽  
Double Quantum Well ◽  
Deep Violet
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