Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature

1990 ◽  
Vol 56 (10) ◽  
pp. 922-924 ◽  
Author(s):  
R. Kapre ◽  
A. Madhukar ◽  
K. Kaviani ◽  
S. Guha ◽  
K. C. Rajkumar
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
High Peak ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Growth and characterization of CaF2/Ge/CaF2/Si(111) quantum dots for resonant tunneling diodes operating at room temperature

2002 ◽  
Vol 81 (3) ◽  
pp. 499-501 ◽  
Author(s):  
A. I. Yakimov ◽  
A. S. Derjabin ◽  
L. V. Sokolov ◽  
O. P. Pchelyakov ◽  
A. V. Dvurechenskii ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

2017 ◽  
Vol 110 (3) ◽  
pp. 033507 ◽  
Author(s):  
Andreas Pfenning ◽  
Georg Knebl ◽  
Fabian Hartmann ◽  
Robert Weih ◽  
Andreas Bader ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Room Temperature Operation

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

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