Role of two‐photon absorption in ultrafast semiconductor optical switching devices

1990 ◽  
Vol 56 (14) ◽  
pp. 1305-1307 ◽  
Author(s):  
J. S. Aitchison ◽  
M. K. Oliver ◽  
E. Kapon ◽  
E. Colas ◽  
P. W. E. Smith
2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.


2000 ◽  
Vol 09 (02) ◽  
pp. 217-225 ◽  
Author(s):  
P. SREERAMANA AITHAL ◽  
P. PREM KIRAN ◽  
D. NARAYANA RAO

Optical limiting characteristics of pure and 150 ppm Fe-doped Bi 12 SiO 20 (BSO:Fe) crystals are studied at high intensity nanosecond pulse regime. When the input light is at 532 nm and at 595 nm with 6 ns pulse duration, a good optical limiting behavior is observed due to simultaneous effect of trap assisted excited state absorption and two photon absorption. The precise role of the internal defects due to impurity centers present in the crystal lattice is explained on the basis of a four level model. This study reveal that the increased nonlinear absorption due to iron incorporation in BSO makes it an excellent passive optical limiter.


2017 ◽  
Vol 2 (9) ◽  
pp. 1700095 ◽  
Author(s):  
Bo-Ji Huang ◽  
Chung-Lun Wu ◽  
Yung-Hsiang Lin ◽  
Huai-Yung Wang ◽  
Cheng-Ting Tsai ◽  
...  

2009 ◽  
Vol 81 (1) ◽  
pp. 63-68 ◽  
Author(s):  
M. Fakis ◽  
I. Fitilis ◽  
S. Stefanatos ◽  
P. Vellis ◽  
J. Mikroyannidis ◽  
...  

2014 ◽  
Vol 119 (2) ◽  
pp. 1260-1267 ◽  
Author(s):  
Alexander W. Achtstein ◽  
Ana Ballester ◽  
Jose L. Movilla ◽  
Jonas Hennig ◽  
Juan I. Climente ◽  
...  

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