Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor

1989 ◽  
Vol 55 (1) ◽  
pp. 62-64 ◽  
Author(s):  
G. S. Tompa ◽  
C. R. Nelson ◽  
M. A. Saracino ◽  
P. C. Colter ◽  
P. L. Anderson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical

Development and Implementation of Large Area, Economical Rotating Disk Reactor Technology for Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
G. S. Tompa ◽  
P. A. Zawadzki ◽  
M. Mckee ◽  
E. Wolak ◽  
K. Moy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Yield ◽  
Thermal Dynamics ◽  
Material Systems ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical

AbstractThe vertical, high speed, rotating disk reactor (RDR) has, in recent years, found broad application in the Metalorganic Chemical Vapor Deposition of a variety of material systems. These applications include epitaxial films of III-V and II-VI compound semiconductors, oxides (such as YBCO superconductors/ferroelectrics and SiO2, amongst others), Group IV materials (such as diamond and SiC), and metals (such as copper and tungsten). As production of these material systems increases, so too does the need for economical, high yield equipment capable of producing these materials with high levels of uniformity and repeatability. We have used computational fluid dynamic modeling to investigate the complex flow and thermal dynamics required for scaling existing RDRs (as large as a 7.25″ diameter disk handling up to 3×3″ wafers) to larger dimensions (11″ and 12″ diameter disks for multiple 4″ and 15.5″ diameter disk for 3×6″ wafers). The scaling parameters predicted by the modeling codes are reviewed and correlate well with experimental results. Materials results on GaAs films using TBAs, TMGa, and TMA1 for the 11″ diameter system routinely demonstrate within wafer thickness uniformities of <1.1% for 3×4″ wafers, as well as for 6″ or 8″ diameters, wafer to wafer uniformities <1% and run to run repeatabilities within 1%. These results are verified by SEM analysis, as well as with GaAs/AJGaAs Bragg reflectors. The excellent results on the 11″ and 15.5″ diameter platters combined with modeling indicated that 4×4″ wafers on a 12″ diameter platter would produce ideal films which, indeed, is the case. The 11″ diameter results have been surpassed, demonstrating <0.9% for >9″ diameters (4×4″ wafers) on a 12″ diameter susceptor. With high reactant efficiencies (>3 6%), short cycle times between growths using the loadlock, and minimal maintenance requirements, the costs per wafer in a cost of ownership model are found to be dramatically less than in competitive technologies.

In‐situ growth of yba2cu3o7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

1989 ◽  
Vol 169 ◽  
Author(s):  
D. W. Noh ◽  
B. Gallois ◽  
Y. Q. Li ◽  
C. Chern ◽  
B. Rear ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Rotating Disk Reactor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractSuperconducting thin films of YBa2Cu307‐x were grown on MgO (100) and YSZ(IOO) substrates without post‐annealing by metal organic chemical vapor deposition using vertical, high‐speed (1100 rpm) rotating disk reactor. The source materials were Y(tmhd)3, Ba(tmhd)2, and Cu(tmhd)2, which were kept at 135 °C, 240 °C, and 120 °C respectively. The precursors were transported using nitrogen as the carrier gas and introduced separately into the cylindrical stainless steel reaction chamber, which was maintained at 60 torr. The oxygen partial pressure was 30 Torr. The substrates were heated resistively at 800°C. After growth, the films were cooled down at a rate of 5 °C/min under 1 atmospheric pressure of pure oxygen. The X‐ray diffraction pattern of the films showed primarily an orientation of c‐axis perpendicular to the substrates, with weak peaks of (hoo) corresponding to a‐axis orientation. Scanning Electron Microscopy of the films showed a well‐developed a‐axis and c‐axis plate‐like structure which appeared as rectangular micron‐sized features on the MgO surface. On the YSZ substrates a‐axis and c‐axis plate‐like projections were also observed, with the dense plate‐like c‐axis orientation dominant. Four probe resistance measurements showed Tc(R=0) at 91.8 K(△TC=2.2 K) and 85 K (△TC=7 K) on YSZ and MgO substrates respectively.

Non-Destructive and Whole Wafer Characterization of III-V Infrared Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 484 ◽  
Author(s):  
Z. C. Feng ◽  
M. Pelczynski ◽  
C. Beckham ◽  
P. Cooke ◽  
I. Ferguson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Metalorganic Chemical Vapor Deposition ◽  
Measurement Techniques ◽  
Chemical Vapor ◽  
Production Environment ◽  
Sheet Resistivity ◽  
Non Destructive ◽  
Metalorganic Chemical

AbstractMultiple wafer growth of infrared III-V semiconductor materials of InSb and InGaAsP have been produced by metalorganic chemical vapor deposition technology employing a vertical reactor growth configuration with a high speed rotating disk. Three measurement techniques of sheet resistivity, Fourier transform infrared (FTIR) reflectance and photoluminescence have been used to characterize epitaxial films on wafers up to 4″ diameter. Mapping distributions of the film thickness, sheet resistivity, surface morphology, and PL peak wavelength with uniformities better than 1% are illustrated. Data from our 2900 runs are produced. Variations of the characteristic features of the film with the growth conditions are discussed. These whole wafer and non-destructive material characterization techniques tightly coupled with the epitaxial processes are necessary to realize the high quality and high uniformity growth of state-of-art materials in a production environment.

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