Insituobservation by ultrahigh vacuum reflection electron microscopy of terrace formation processes on (100) silicon surfaces during annealing

1989 ◽  
Vol 55 (14) ◽  
pp. 1400-1402 ◽  
Author(s):  
N. Inoue ◽  
K. Yagi
Keyword(s):  
Electron Microscopy ◽  
Ultrahigh Vacuum ◽  
Silicon Surfaces ◽  
Formation Processes ◽  
Reflection Electron Microscopy

Reflection electron microscopy of clean and gold deposited (111) silicon surfaces

1980 ◽  
Vol 97 (2-3) ◽  
pp. 393-408 ◽  
Author(s):  
N. Osakabe ◽  
Y. Tanishiro ◽  
K. Yagi ◽  
G. Honjo
Keyword(s):  
Electron Microscopy ◽  
Silicon Surfaces ◽  
Reflection Electron Microscopy

Step Structures Created on Vicinal Si(111) During Resistive Electrical Heating

1990 ◽  
Vol 202 ◽  
Author(s):  
R. J. McClelland ◽  
Y. Homma
Keyword(s):  
Electron Microscopy ◽  
Ultrahigh Vacuum ◽  
Electrical Heating ◽  
Step Bunching ◽  
Heating Current ◽  
Reflection Electron Microscopy ◽  
Specific Temperature ◽  
Vacuum Heating ◽  
Current Reversal

ABSTRACTScanning reflection electron microscopy was used to examine step structures which form on vicinal Si(111) specimens during resistive electrical heating under ultrahigh vacuum. Heating-current-induced step bunching occurred, forming substantially linear step-bands in specific temperature regions. Small pinning points disrupted the linearity of steps. The interaction between step-bands and large pinning points resulted in the formation of macrosteps, which showed some stability against dispersal during current reversal. Ion-etched grooves influenced step orientation during current-induced step migration.

Reflection electron microscopy of clean and gold deposited (111) silicon surfaces

1980 ◽  
Vol 97 (2-3) ◽  
pp. A252-A253
Author(s):  
N. Osakabe ◽  
Y. Tanishiro ◽  
K. Yagi ◽  
G. Honjo
Keyword(s):  
Electron Microscopy ◽  
Silicon Surfaces ◽  
Reflection Electron Microscopy

REFLECTION ELECTRON MICROSCOPY OBSERVATION OF THE BEHAVIOR OF MONOATOMIC STEPS ON THE SILICON SURFACES

1997 ◽  
Vol 04 (03) ◽  
pp. 551-558 ◽  
Author(s):  
A. L. ASEEV ◽  
A. V. LATYSHEV ◽  
A. B. KRASILNIKOV
Keyword(s):  
Electron Microscopy ◽  
Silicon Surface ◽  
Silicon Surfaces ◽  
Two Dimensional ◽  
Microscopy Observation ◽  
Step Flow ◽  
Step Motion ◽  
Direct Observations ◽  
Reflection Electron Microscopy ◽  
Step Flow Growth

Ultrahigh vacuum reflection electron microscopy (UHV REM) has been applied to imaging of monoatomic steps on silicon surfaces (111) and (100). The reversible rearrangements of the monoatomic step trains to the step bands and step antibands were found from direct observation of monoatomic step motion during sublimation. The influence of the direction of the electric current heating the specimen was observed. The recent data on atomic mechanisms of step bunching and debunching were reviewed. The monoatomic step behavior on the (100) silicon surface as well as (7×7)-(1×1) phase transition on the (111) surface was described. Direct observations of homoepitaxial processes were carried out. Transition from the step flow growth mode to the nucleation of two-dimensional islands was studied depending on the deposition rate and the substrate temperature. The initial stages of the heteroepitaxial process of germanium, gold and calcium fluorite on the silicon (111) surface were investigated. Finally, the mechanism of step rearrangements during the formation of superstructure domains leading to monoatomic step clustering was discussed.

Studies of Oxide Formation on Copper Thin Films by Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 316-317
Author(s):  
G. G. Hembree ◽  
M. A. Otooni ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Single Crystal ◽  
Crystal Surface ◽  
Crystal Defects ◽  
Diffraction Reflection ◽  
Reaction Products ◽  
Intermediate Energies ◽  
Crystal Films ◽  
Reflection Electron Microscopy

The formation of oxide structures on single crystal films of metals has been investigated using the REMEDIE system (for Reflection Electron Microscopy and Electron Diffraction at Intermediate Energies) (1). Using this instrument scanning images can be obtained with a 5 to 15keV incident electron beam by collecting either secondary or diffracted electrons from the crystal surface (2). It is particularly suited to studies of the present sort where the surface reactions are strongly related to surface morphology and crystal defects and the growth of reaction products is inhomogeneous and not adequately described in terms of a single parameter. Observation of the samples has also been made by reflection electron diffraction, reflection electron microscopy and replication techniques in a JEM-100B electron microscope.A thin single crystal film of copper, epitaxially grown on NaCl of (100) orientation, was repositioned on a large copper single crystal of (111) orientation.

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

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