Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity‐induced disordering

1989 ◽  
Vol 55 (14) ◽  
pp. 1373-1375 ◽  
Author(s):  
M. O’Neill ◽  
A. C. Bryce ◽  
J. H. Marsh ◽  
R. M. De La Rue ◽  
J. S. Roberts ◽  
...  
Keyword(s):  
Quantum Well ◽  
Absorption Edge ◽  
Optical Waveguides ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum

Low‐loss multiple quantum well GaInAs/InP optical waveguides

1989 ◽  
Vol 54 (18) ◽  
pp. 1737-1739 ◽  
Author(s):  
R. J. Deri ◽  
E. Kapon ◽  
R. Bhat ◽  
M. Seto ◽  
K. Kash
Keyword(s):  
Quantum Well ◽  
Optical Waveguides ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Low Loss

scholarly journals Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

1998 ◽  
Vol 537 ◽  
Author(s):  
M.D. McCluskey ◽  
L.T. Romano ◽  
B.S. Krusor ◽  
D. Hofstetter ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Composition Profiles ◽  
Secondary Ion

AbstractInterdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

Characterization and Griwth of Oicanic Multiple Qanm Well Structures

1990 ◽  
Vol 198 ◽  
Author(s):  
F.F. So ◽  
S.R. Forrest ◽  
Y.Q. Shi ◽  
W.H. Steier
Keyword(s):  
Quantum Well ◽  
Layer Thickness ◽  
Organic Semiconductors ◽  
Multiple Quantum Well ◽  
Energy Shift ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Singlet Exciton ◽  
Molecular Beam Deposition

ABSTRACTMultiple quantum well structures consisting of alternating layers of two crystalline organic semiconductors, namely, 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) and 3,4,7,8 naphthalenetetracarboxylic dianhydride (NTCDA), have been grown by organic molecular beam deposition. The layer thickness was varied from 10 to 200 Å. Birefringence measurements indicate that there is a strong structural ordering in all PrCDA layers, although the PrCDA and NTCDA crystal structures are incommensurate. From optical absorption measurements, it is found there is a blue shift in the lowest energy PICDA singlet exciton line with decreasing layer thickness. A model based on exciton quantum confinement is proposed to explain the energy shift. We have measured the low temperature photoluminescence spectra of organic quantum well structures, and found a slight red shift in the spectra with decreasing well width. These results are also discussed.

Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
X. Hu ◽  
R. Gaska ◽  
C. Chen ◽  
J. Yang ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Stimulated Emission ◽  
Localized States ◽  
Light Sources ◽  
Multiple Quantum ◽  
X Ray ◽  
Deep Uv

ABSTRACTWe report on high Al-content AlGaN-based deep UV emitter structures grown over single crystal, slightly off c-axis (5.8 degrees) bulk AlN substrates. AlN/AlGaN multiple quantum well (MQW) structures with up to 50% of Al in the well material were grown by using low-pressure MOCVD and characterized by using X-ray, AFM, SEM and photoluminescence techniques. Two light sources, one at 213 nm wavelength for selective excitation of quantum well layers and another one at 193 nm to excite both wells and barriers, were exploited. A weak temperature dependence (from 8 K to 300 K) of the luminescence intensity and the absence of blue-shift of the luminescence peak with increasing excitation intensity pointed to a low density of localized states, in a good agreement with the X-ray data, which indicated very high quality of these MQW structures.The most striking result was observation of stimulated emission at wavelength as short as 258 nm in Al0.5Ga0.5N/AlN MQWs grown on bulk AlN single crystals.

Polarisation-dependent modal properties of diluted multiple-quantum-well optical waveguides

1989 ◽  
Vol 25 (17) ◽  
pp. 1162 ◽  
Author(s):  
R.J. Deri ◽  
N. Yasuoka ◽  
M. Makiuchi ◽  
A. Kuramata ◽  
O. Wada
Keyword(s):  
Quantum Well ◽  
Optical Waveguides ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Modal Properties

scholarly journals Disordering of InGaN/GaN Superlattices after High-Pressure Annealing

1999 ◽  
Vol 4 (S1) ◽  
pp. 293-298
Author(s):  
M.D. McCluskey ◽  
L.T. Romano ◽  
B.S. Krusor ◽  
D. Hofstetter ◽  
D.P. Bour ◽  
...  
Keyword(s):  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Composition Profiles ◽  
Secondary Ion

Interdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

Optical Waveguides in Bulk and Multiple-Quantum-Well Structures

1986 ◽  
pp. 91-93
Author(s):  
D. Sarid ◽  
W. M. Gibbons ◽  
H. M. Gibbs ◽  
M. E. Warren ◽  
S. W. Koch ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Waveguides ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

InGaAs/InGaAsP Quantum-Well Engineering for Multiple Regrowth MOVPE Process

2005 ◽  
Vol 891 ◽  
Author(s):  
Hans-Jeorg Lohe ◽  
Emilio Gini ◽  
Riccardo Scollo ◽  
Franck Robin ◽  
Heinz Jaeckel
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Heating Time ◽  
Emission Wavelength ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Monolithically Integrated ◽  
Layer Structures ◽  
Quantum Well Width

ABSTRACTFor the heterogeneous integration of several layer structures for absorber, gain and passive waveguide sections in a monolithically-integrated mode locked laser diode, the bandgap of the absorber section has to be matched to the emission wavelength of the gain section. Because of the use of a multiple regrowth process for optical butt-coupling, the first grown multiple quantum-well gain material undergoes a quantum-well intermixing process, resulting in a blue shift of the emitting optical wavelength. Experimental results show, that the blue shift is dependent on the process details and cannot be investigated by simple thermal cycling of unprocessed quantum well-structures. With the introduction of an effective quantum-well width computed from the emission wavelength we found a linear relationship between the effective quantum well width shrinkage and the cumulated regrowth heating time of 8.3Å/h at a growth temperature of 630°C. Therefore knowing the cumulated regrowth time for a laser fabrication, we could successfully design the initial quantum well thickness that yields the targeted emitting wavelength and excellent matching to the absorber bandedge.

Sign in / Sign up

Export Citation Format

Share Document