Suppression of acoustic phonon scattering in two‐dimensional electron gas on (InAs)1(GaAs)1/InP heterointerfaces

1989 ◽  
Vol 54 (24) ◽  
pp. 2414-2416 ◽  
Author(s):  
Yutaka Kodaira ◽  
Hiroshi Kuwano ◽  
Kotaro Tsubaki
Keyword(s):  
Acoustic Phonon ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

2017 ◽  
Vol 897 ◽  
pp. 719-722 ◽  
Author(s):  
Zhan Wei Shen ◽  
Feng Zhang ◽  
Sima Dimitrijev ◽  
Ji Sheng Han ◽  
Li Xin Tian ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Interface Roughness ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Electron Mobility ◽  
Dimensional Electron Gas

This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al0.2Ga0.8N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×1013 cm-2 was obtained in the Al0.2Ga0.8N/4H-SiC heterostructure, which is comparable to the electron concentration in Al0.2Ga0.8N/GaN heterostructure. The current–voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al0.2Ga0.8N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the AlxGa1-xN/4H-SiC interface exhibits high electron mobility values of 3365 cm2/ (V·s) at 77K and 1120 cm2/ (V·s) at 300K. These results indicate that AlxGa1-xN/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.

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