Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon

1989 ◽  
Vol 54 (13) ◽  
pp. 1217-1219 ◽  
Author(s):  
W. Lur ◽  
L. J. Chen
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Growth Kinetics ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Kinetics Of ◽  
Amorphous Interlayer

Kinetics of TiSi2 thin film formation at a single-crystal silicon surface by Ti ion irradiation

1993 ◽  
Vol 226 (2) ◽  
pp. 191-195
Author(s):  
E.I. Bogdanov ◽  
L.N. Larikov ◽  
E.A. Maximenko ◽  
V.I. Franchouk
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Silicon Surface ◽  
Ion Irradiation ◽  
Film Formation ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thin Film Formation ◽  
Kinetics Of

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Measurement of Stress and Strain of Single-Crystal-Silicon Thin Film during On-Chip Tensile Test

1999 ◽  
Vol 119 (2) ◽  
pp. 67-72 ◽  
Author(s):  
Taeko Ando ◽  
Tetsuo Yoshioka ◽  
Mitsuhiro Shikida ◽  
Kazuo Sato ◽  
Tatsuo Kawabata
Keyword(s):  
Thin Film ◽  
Tensile Test ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Stress And Strain ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
On Chip

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

Abstract Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (>1000°C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer1, thereby preventing their applications to compact devices2, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon3). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (<1×10-4 Ωcm2) and high breakdown voltage VBD (~100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon
Sign in / Sign up

Export Citation Format

Share Document