Measurements of the polarization dependence of field‐induced refractive index changes in GaAs/AlAs multiple quantum well structures

1988 ◽  
Vol 53 (2) ◽  
pp. 86-88 ◽  
Author(s):  
J. Shimizu ◽  
T. Hiroshima ◽  
A. Ajisawa ◽  
M. Sugimoto ◽  
Y. Ohta
2014 ◽  
Vol 28 (29) ◽  
pp. 1450204 ◽  
Author(s):  
M. Solaimani

In this work we have investigated the effect of external electric field on the electronic structure and refractive index changes of a GaN/AlN constant total effective length multiple quantum well. A decreasing oscillatory behavior for energy levels was seen when the electric field increased and in some energy values the energy levels intersected. By increasing the number of wells, oscillator strength dropped suddenly and moved to higher electric field in a critical electric field. By using the number of wells and the total length of the structure as two tuning tools, we were able to select our previously determined critical electric field.


1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann

2007 ◽  
Vol 101 (3) ◽  
pp. 033516 ◽  
Author(s):  
D. M. Graham ◽  
P. Dawson ◽  
G. R. Chabrol ◽  
N. P. Hylton ◽  
D. Zhu ◽  
...  

2007 ◽  
Vol 91 (23) ◽  
pp. 231103 ◽  
Author(s):  
S. Sadofev ◽  
S. Kalusniak ◽  
J. Puls ◽  
P. Schäfer ◽  
S. Blumstengel ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document