scholarly journals How should the goals for ‘contact optimisation’ be set, and how should contact optimisation be managed in a multi-channel inbound and outbound environment?

2009 ◽  
Vol 16 (4) ◽  
pp. 241-245 ◽  
Author(s):  
Julian Berry
Keyword(s):  
Contact Optimisation

scholarly journals AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
S. Taking ◽  
D. MacFarlane ◽  
E. Wasige
Keyword(s):  
Ohmic Contact ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Process Development ◽  
Metal Deposition ◽  
Device Performance ◽  
Sidewall Passivation ◽  
Rf Performance ◽  
Wet Etch ◽  
Contact Optimisation

Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al2O3as a gate dielectric and surface passivation for devices. Significant improvement in device performance was observed using the following techniques: (1) Ohmic contact optimisation using Al wet etch prior to Ohmic metal deposition and (2) mesa sidewall passivation. DC and RF performance of the fabricated devices will be presented and discussed in this paper.

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