scholarly journals The Role of Auger Electron Spectroscopy in the Semiconductor Industry

1995 ◽  
Vol 6 (3) ◽  
pp. 321-343 ◽  
Author(s):  
Derek K. Skinner
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Semiconductor Industry

Effect of Cr+ Implantation on the Thermal Oxidation of Ta

1983 ◽  
Vol 27 ◽  
Author(s):  
K.S. Grabowski ◽  
C.R. Gossett
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Oxidation Resistance ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Imaging Techniques ◽  
Resistance To Oxidation ◽  
Physical Effects ◽  
Local Breakdown

ABSTRACTCr+ implantation of Ta was undertaken in an attempt to improve oxidation resistance at temperatures between 500 and 750°C, and for oxidation times up to l00h. Samples were implanted with 1.5×1017 Cr+/cm2 at 150 keV, and compared to samples implanted with 1×l016 or 1×1017 Ta+/cm2 at 145 keV to evaluate the role of physical effects from ion implantation. Following oxidation, samples were examined using helium and proton backscattering, electron and optical imaging techniques, and auger electron spectroscopy. Improved resistance to oxidation was observed in Cr+-implanted samples oxidized at 500°C for up to l00h, and at 600°C for about lh. However, some local breakdown occurred in these samples and no protection at all was observed at 750°C. Reasons for this breakdown are discussed and alternate approaches for improving oxidation resistance using ion implantation are proposed.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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