Measurement of deformation at the atomic scale by high-resolution electron microscopy

2003 ◽  
Vol 100 (2) ◽  
pp. 211-222 ◽  
Author(s):  
M. J. Hÿtch
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Resolution Electron

X-Ray-Optical Multilayer Structures Studied Using High Resolution Electron Microscopy.

1986 ◽  
Vol 77 ◽  
Author(s):  
Mary Beth Stearns ◽  
Amanda K. Petford-Long ◽  
C.-H. Chang ◽  
D. G. Stearns ◽  
N. M. Ceglio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Surface ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Degree Of Crystallinity ◽  
Multilayer Systems ◽  
Layer Width ◽  
X Ray ◽  
Resolution Electron

ABSTRACTThe technique of high resolution electron microscopy has been used to examine the structure of several multilayer systems (MLS) on an atomic scale. Mo/Si multilayers, in use in a number of x-ray optical element applications, and Mo/Si multilayers, of interest because of their magnetic properties, have been imaged in cross-section. Layer thicknesses, flatness and smoothness have been analysed: the layer width can vary by up to 0.6nm from the average value, and the layer flatness depends on the quality of the substrate surface for amorphous MLS, and on the details of the crystalline growth for the crystalline materials. The degree of crystallinity and the crystal orientation within the layers have also been investigated. In both cases, the high-Z layers are predominantly crystalline and the Si layers appear amorphous. Amorphous interfacial regions are visible between the Mo and Si layers, and crystalline cobalt suicide interfacial regions between the Co and Si layers. Using the structural measurements obtained from the HREM results, theoretical x-ray reflectivity behaviour has been calculated. It fits the experimental data very well.

Atomic Scale Study of Cosi/Si (111) and CoSi2/Si (111) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
A. Catana ◽  
M. Heintze ◽  
P.E. Schmid ◽  
P. Stadelmann
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
High Resolution ◽  
Orientation Relationship ◽  
Cross Sections ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Initial Stage ◽  
Resolution Electron

ABSTRACTHigh Resolution Electron Microscopy (HREM) was used to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. CoSi is found to grow epitaxially on Si with [111]Si // [111]CoSi and < 110 >Si // < 112 >CoSi. Two CoSi non-equivalent orientations (rotated by 180° around the substrate normal) can occur in this plane. They can be clearly distinguished by HRTEM on cross-sections ( electron beam along [110]Si). At about 500°C CoSi transforms to CoSi2. Experimental results show that the type B orientation relationship satisfying [110]Si // [112]CoSi is preserved after the initial stage of CoSi2 formation. At this stage an epitaxial CoSi/CoSi2/Si(111) system is obtained. The atomic scale investigation of the CoSi2/Si interface shows that a 7-fold coordination of the cobalt atoms is observed in both type A and type B epitaxies.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Studies of Material Reactions by In Situ High-Resolution Electron Microscopy

MRS Bulletin ◽  
1994 ◽  
Vol 19 (6) ◽  
pp. 26-31 ◽  
Author(s):  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Ex Situ ◽  
New Materials ◽  
Kinetic Measurements ◽  
Transmission Electron ◽  
Resolution Electron

Processing has always been a key component in the development of new materials. Basic scientific understanding of the reactions and transformations that occur has obvious importance in guiding progress. Invaluable insight can be provided by observing the changes during processing, especially at high magnification by in situ microscopy. Now that this can be achieved at the atomic level by using high-resolution electron microscopy (HREM), atomic behavior can be seen directly. Accordingly, many deductions concerning reactions in materials at the atomic scale are possible.The purpose of this article is to illustrate the level reached by in situ HREM. The essential procedure is to form a high-resolution image of a standard transmission electron microscope (TEM) sample and then to alter the structure by some means in a controlled manner, such as by heating. Continual recording on videotape allows subsequent detailed analysis of the behavior, even on a frame-by-frame (1/30 second) basis. The most obvious advantage is to follow the atomic rearrangements directly in real time. However, in addition, by continuous recording no stages in a reaction are missed, which can often occur in a series of conventional ex situ annealed samples because of the limited number of samples that can realistically be examined by HREM. One can be sure that the same reaction, in the same area, is being studied. Furthermore, by changing the temperature systematically, extremely precise kinetic measurements can be made (e.g., for activation energies and kinetic laws) and the whole extent of a material transformation can be investigated in one sample, something that would take months of work if studied conventionally. The information provided by in situ HREM is often unique and so it can become an important technique for fundamental materials investigations.

Study of structural defects in zeolites by high-resolution electron microscopy and Fourier analysis methods

1984 ◽  
Vol 42 ◽  
pp. 652-653
Author(s):  
J. M. Domínguez ◽  
D. R. Acosta N.
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Fourier Analysis ◽  
High Resolution Electron Microscopy ◽  
Structural Features ◽  
Atomic Scale ◽  
Structural Defects ◽  
Phase Grating ◽  
Resolution Electron ◽  
Complete Study

For thin crystals and weak-phase objects, the phase grating approximation indicates that intensities are directly proportional to the projected lattice potencial VZ (x, y). Additionnally at the optimum focus condition, i. e. γ = π/2 (see ref. (2) for details) both electron diffraction and optical transform patterns are identical. Therefore, for very thin crystals, i.e. t < 102A, and several types of zeolites, including ZSM-5, Faujasites X, Y, erionites and A-type zeolites, the main assumptions of the phase grating approximation hold, making possible a complete study of structural features taking place at a nearly atomic scale. The method used to characterize the ultraestrncture of those zeolites are high resolution electron microscopy, Fourier analysis in the computer of the digitized micrographs and Laser optical diffractometry.

High-resolution Electron Microscopy of grain Boundary Structures in Yttria-stabilized Cubic Zirconia

2000 ◽  
Vol 654 ◽  
Author(s):  
K. L. Merkle ◽  
L. J. Thompson ◽  
G.-R. Bai ◽  
J. A. Eastman
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Organic Chemical ◽  
Special Technique ◽  
Cubic Zirconia ◽  
Resolution Electron ◽  
Wide Range ◽  
Relaxation Modes

AbstractThe atomic-scale structure of grain boundaries (GBs) in yttria-stabilized cubic zirconia (YSZ) was investigated by high-resolution electron microscopy (HREM). Non-stoichiometric oxides have found a wide range of applications and therefore it is of importance to explore the role of GBs and their atomic-scale relaxation modes. [001] and [110] tilt GBs were examined by HREM in highly textured thin films of YSZ grown by metal-organic chemical vapor deposition (MOCVD). In addition, a special technique was developed to also allow the HREM study of twist and general GBs. GBs and triple junctions show quite dense arrangements of cation atomic columns. The GB core structures in YSZ can be contrasted to the more open structures in stoichiometric cubic oxides, such NiO, which are characterized by a relatively large GB excess volume. This appears to be due to several factors, including the necessary rearrangement of the oxygen sublattice near GBs in a CsCl2 type structure, the redeployment of oxygen vacancies near GBs, and the segregation of Y to the GB. Relative to stoichiometric oxides, such mechanisms provide additional degrees of freedom for atomic relaxations at GBs and the development of low-energy GBs. These additional relaxation modes, which result in GB cation arrangements more akin to metallic systems, are also reflected by Burgers vector dissociations observed in low-angle YSZ GBs.

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