scholarly journals Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPE

1995 ◽  
Vol 05 (C5) ◽  
pp. C5-1173-C5-1178
Author(s):  
T. Nagatomo ◽  
O. Omoto
Keyword(s):  
Physical Properties ◽  
Indium Nitride ◽  
Gallium Indium Nitride

Gallium Indium Nitride-Based Green Lasers

2012 ◽  
Vol 30 (5) ◽  
pp. 679-699 ◽  
Author(s):  
Dmitry Sizov ◽  
Rajaram Bhat ◽  
Chung-En Zah
Keyword(s):  
Indium Nitride ◽  
Gallium Indium Nitride

scholarly journals A simulation of Gallium Indium Nitride Based Solar Cells

2020 ◽  
Author(s):  
Jin Wu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Absorption Coefficient ◽  
Indium Nitride ◽  
Solar Spectrum ◽  
Thin Layers ◽  
Gallium Indium Nitride ◽  
Optimal Values ◽  
High Absorption Coefficient ◽  
High Absorption

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control

2016 ◽  
Vol 52 (38) ◽  
pp. 6407-6410 ◽  
Author(s):  
Sujoy Sarkar ◽  
S. Sampath
Keyword(s):  
Gallium Nitride ◽  
White Light ◽  
Indium Nitride ◽  
Deep Eutectic Solvent ◽  
Gallium Nitrate ◽  
Ambient Conditions ◽  
Light Emitting ◽  
Gallium Indium Nitride ◽  
Potential Control ◽  
Temperature Deposition

A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

scholarly journals Local Heat Energy Transport Analyses in Gallium-Indium-Nitride/Gallium Nitride Heterostructure by Microscopic Raman Imaging Exploiting Simultaneous Irradiation of Two Laser Beams

2020 ◽  
Author(s):  
Shungo Okamoto ◽  
Naomichi Saito ◽  
Kotaro Ito ◽  
Bei Ma ◽  
Ken Morita ◽  
...  
Keyword(s):  
Heat Generation ◽  
Energy Transport ◽  
Indium Nitride ◽  
Local Heat ◽  
Heat Energy ◽  
Raman Imaging ◽  
Gallium Indium Nitride ◽  
Simultaneous Irradiation ◽  
Different Characteristics ◽  
532 Nm

Abstract Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

scholarly journals Simulation Result of Gallium Indium Nitride Solar Cells

2021 ◽  
Author(s):  
jin wu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Absorption Coefficient ◽  
Indium Nitride ◽  
Solar Spectrum ◽  
Thin Layers ◽  
Gallium Indium Nitride ◽  
Optimal Values ◽  
High Absorption Coefficient ◽  
High Absorption

InGaN can reach all values of bandgap from 3.42 to 0.7eV, which covers almost the entire solar spectrum. This study is to understand the influence of each parameter of the solar cell for an improved optimization of performance. The yield obtained for a reference cell is 12.2 % for optimal values of doping of the layers. For generation and recombination, performance of the cell varies with these settings. III nitrides have a high absorption coefficient, a very thin layers of material are sufficient to absorb most of the light.

Physical properties of indium nitride, impurities, and defects

2014 ◽  
Vol 56 (9) ◽  
pp. 997-1006 ◽  
Author(s):  
S. S. Khludkov ◽  
I. A. Prudaev ◽  
O. P. Tolbanov
Keyword(s):  
Physical Properties ◽  
Indium Nitride ◽  
Impurities And Defects

The Photometric Properties of the Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 365-377 ◽  
Author(s):  
B. Hauck
Keyword(s):  
Physical Properties ◽  
Ap Stars

The Ap stars are numerous - the photometric systems tool It would be very tedious to review in detail all that which is in the literature concerning the photometry of the Ap stars. In my opinion it is necessary to examine the problem of the photometric properties of the Ap stars by considering first of all the possibility of deriving some physical properties for the Ap stars, or of detecting new ones. My talk today is prepared in this spirit. The classification by means of photoelectric photometric systems is at the present time very well established for many systems, such as UBV, uvbyβ, Vilnius, Geneva and DDO systems. Details and methods of classification can be found in Golay (1974) or in the proceedings of the Albany Colloquium edited by Philip and Hayes (1975).

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