EXPERIMANTAL X-RAY RESONANT RAMAN STUDY OF NICKEL

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-827-C9-830
Author(s):  
S. MANNINEN ◽  
P. SUORTTI ◽  
M. J. COOPER ◽  
J. CHOMILIER ◽  
G. LOUPIAS
Keyword(s):  
X Ray ◽  
Raman Study ◽  
Resonant Raman

Magnetic resonance effect in x-ray resonant Raman scattering

1997 ◽  
Vol 56 (22) ◽  
pp. R14267-R14270 ◽  
Author(s):  
T. Iwazumi ◽  
K. Kobayashi ◽  
S. Kishimoto ◽  
T. Nakamura ◽  
S. Nanao ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Raman Scattering ◽  
Resonance Effect ◽  
X Ray ◽  
Resonant Raman ◽  
Resonant Raman Scattering

High pressure photoluminescence and resonant Raman study of GaAs

1978 ◽  
Vol 25 (4) ◽  
pp. 209-211 ◽  
Author(s):  
Peter Y. Yu ◽  
Benjamin Welber
Keyword(s):  
High Pressure ◽  
Raman Study ◽  
Resonant Raman

scholarly journals Raman study of resonance effects in Ga1−xAlxN solid solutions

1998 ◽  
Vol 3 ◽  
Author(s):  
F. Demangeot ◽  
J. Frandon ◽  
M. A. Renucci ◽  
H. Sands ◽  
D. Batchelder ◽  
...  
Keyword(s):  
Band Gap ◽  
Detailed Comparison ◽  
Peak Position ◽  
Band Gap Energy ◽  
Resonance Effects ◽  
Organic Vapor ◽  
Phonon Peak ◽  
Metal Organic ◽  
Raman Study ◽  
Resonant Raman

The photoluminescence and Raman spectra of several Ga1−xAlxN layers (0 ≤ x ≤ 0.86) grown on sapphire substrates by metal-organic vapor phase epitaxy have been recorded at room temperature, under an excitation at 244 nm. Using the photoluminescence spectra, the variation of the band gap of these alloys can be followed only up to x = 0.5. From resonant Raman scattering, it can be deduced that the band gap energy of the solid solution for x very close to 0.7 corresponds to the incident photon energy (5.08 eV). This result is confirmed by a detailed comparison of the present work with previous experimental data on the A1(LO) phonon peak position, obtained under visible excitation.

scholarly journals Increased Electrical Conductivity of Carbon Nanotube Fibers by Thermal and Voltage Annealing

2021 ◽  
Vol 8 (1) ◽  
pp. 1
Author(s):  
Varun Shenoy Gangoli ◽  
Chris J. Barnett ◽  
James D. McGettrick ◽  
Alvin Orbaek White ◽  
Andrew R. Barron
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Separate Analysis ◽  
Sweet Spot ◽  
Electrical Conductor ◽  
X Ray ◽  
Resonant Raman ◽  
Carbon Nanotube Fibers

We report the effect of annealing, both electrical and by applied voltage, on the electrical conductivity of fibers spun from carbon nanotubes (CNTs). Commercial CNT fibers were used as part of a larger goal to better understand the factors that go into making a better electrical conductor from CNT fibers. A study of thermal annealing in a vacuum up to 800 °C was performed on smaller fiber sections along with a separate analysis of voltage annealing up to 7 VDC; both exhibited a sweet spot in the process as determined by a combination of a two-point probe measurement with a nanoprobe, resonant Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). Scaled-up tests were then performed in order to translate these results into bulk samples inside a tube furnace, with similar results that indicate the potential for an optimized method of achieving a better conductor sample made from CNT fibers. The results also help to determine the surface effects that need to be overcome in order to achieve this.

An X-ray Absorption, Photoemission, and Raman Study of the Interaction between SnO2 Nanoparticle and Carbon Nanotube

2009 ◽  
Vol 113 (15) ◽  
pp. 6114-6117 ◽  
Author(s):  
J. G. Zhou ◽  
H. T. Fang ◽  
J. M. Maley ◽  
J. Y. P. Ko ◽  
M. Murphy ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
X Ray ◽  
Sno2 Nanoparticle ◽  
Raman Study ◽  
X Ray Absorption

scholarly journals Weak anharmonic effects inMgB2: A comparative inelastic x-ray scattering and Raman study

2007 ◽  
Vol 75 (17) ◽  
Author(s):  
Matteo d’Astuto ◽  
Matteo Calandra ◽  
Stephanie Reich ◽  
Abhay Shukla ◽  
Michele Lazzeri ◽  
...  
Keyword(s):  
X Ray ◽  
Anharmonic Effects ◽  
X Ray Scattering ◽  
Raman Study ◽  
Ray Scattering
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