RESONANT ZENER TUNNELING OF ELECTRONS ACROSS THE BAND-GAP BETWEEN BOUND STATES IN THE VALENCE- AND CONDUCTION-BAND QUANTUM WELLS IN A MULTIPLE QUANTUM-WELL STRUCTURE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-439-C5-442
Author(s):  
J. ALLAM ◽  
F. BELTRAM ◽  
F. CAPASSO ◽  
A. Y. CHO
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Conduction Band ◽  
Bound States ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Zener Tunneling

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

scholarly journals Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering

2001 ◽  
Vol 692 ◽  
Author(s):  
J. Zhao ◽  
X. D. Zhang ◽  
Z. C. Feng ◽  
J. C. Deng ◽  
P. Jin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Annealing Temperature ◽  
Multiple Quantum Well ◽  
Blue Shift ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Cladding Layer ◽  
Cap Layer ◽  
Free Vacancy

AbstractInGaAsP/InP multiple quantum wells have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics was investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blue shift was observed. Si3N4, SiO2 and SOG were used for the dielectric layer to create the vacancies. All samples were annealed by rapid thermal anne aling (RTA). The results indicate that the band gap blue shift varies with the dielectric layers and annealing temperature. The SiO2 capping was successfully used with an InGaAs cladding layer to cause larger band tuning effect in the InGaAs/InP MQWs than the Si3N4 capping with an InGaAs cladding layer. On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Far Infrared ◽  
Multiple Quantum ◽  
Infrared Reflectivity ◽  
Quantum Well Structure

Spin-Flip Raman Studies of a ZnSe / Zn1-xMnxSe Multiple Quantum Well Structure

1995 ◽  
Vol 182-184 ◽  
pp. 455-458 ◽  
Author(s):  
P.J. Boyce ◽  
D. Wolverson ◽  
J.J. Davies ◽  
W. Heimbrodt
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Spin Flip

Conduction band engineering in InGaAs/GaAs [111] multiple quantum well p-i-n photodiodes

1993 ◽  
Vol 14 (4) ◽  
pp. 287 ◽  
Author(s):  
J.L. Sánchez-Rojas ◽  
A. Sacedón ◽  
F. Calle ◽  
E. Calleja ◽  
E. Muñoz
Keyword(s):  
Quantum Well ◽  
Conduction Band ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Band Engineering
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