ON THE MOBILITY OF GaAs-AlGaAs HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GaAs

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-255-C5-258 ◽  
Author(s):  
A. GOLD
Keyword(s):  
Impurity Layer

scholarly journals Effect of SiC-Impurity Layer and Growth Temperature on MgB2 Superconducting Tapes Fabricated by HPCVD

2012 ◽  
Vol 18 (1-3) ◽  
pp. 36-40 ◽  
Author(s):  
Mahipal Ranot ◽  
Won Kyung Seong ◽  
Soon-Gil Jung ◽  
Won Nam Kang ◽  
Jinho Joo ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Superconducting Tapes ◽  
Impurity Layer

Effect of an Impurity Layer on Surface Waves

1962 ◽  
Vol 125 (4) ◽  
pp. 1271-1276 ◽  
Author(s):  
Harvey Kaplan
Keyword(s):  
Surface Waves ◽  
Impurity Layer

scholarly journals CURRENT-VOLTAGE CHARACTERISTICS OF SOLAR CELLS p-n JUNCTION ZnO AND TiO2 PARAREL ON Cu2O LAYER

2020 ◽  
Vol 12 (1) ◽  
pp. 1
Author(s):  
Teuku Andi Fadlly ◽  
Rachmad Almi Putra
Keyword(s):  
Solar Cells ◽  
Thermal Oxidation ◽  
Solar Irradiation ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Impurity Layer ◽  
Current Voltage ◽  
Type Semiconductor ◽  
Current Voltage Characteristics ◽  
Increasing Temperature

Current-Voltage Characteristics of solar cells p-n junction ZnO and TiO<sub>2</sub> parallel in the Cu<sub>2</sub>O layer has been determined using solar irradiation. Metal oxide has been used as a semiconductor material, such as ZnO and TiO<sub>2</sub> is an n-type semiconductor. The material has a gap energy of 3.37 eV and 3.2 eV. Thermal oxidation is applied to commercial Cu plates for 60 minutes to produce Cu<sub>2</sub>O layers as p-type semiconductors. The process varies in temperature, namely 300, 400, and 500 °C. The process of thermal oxidation on Cu plates at a temperature of 300 °C increases the impurity in the Cu<sub>2</sub>O layer. The impurity layer is CuO. Then the CuO layer formed decreases with increasing temperature thermal oxidation. CuO layer increases the efficiency of solar cells p-n junction TiO<sub>2</sub>-ZnO parallel in the layer Cu<sub>2</sub>O. The results of measurements with sunlight showed that the TiO<sub>2</sub>-ZnO/Cu<sub>2</sub>O (300) samples had the highest solar cell efficiency, which was 0.28 %.

A simple method for the enhancement ofJcin MgB2thick films with an amorphous SiC impurity layer

2009 ◽  
Vol 22 (7) ◽  
pp. 075010 ◽  
Author(s):  
Soon-Gil Jung ◽  
S W Park ◽  
W K Seong ◽  
Mahipal Ranot ◽  
W N Kang ◽  
...  
Keyword(s):  
Simple Method ◽  
Impurity Layer ◽  
Amorphous Sic
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