LASER RAMAN MICROPROBING TECHNIQUES

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-249-C2-253 ◽  
Author(s):  
P. Dhamelincourt ◽  
J. Barbillat ◽  
M. Delhaye
Keyword(s):  
1981 ◽  
Vol 42 (C4) ◽  
pp. C4-903-C4-906 ◽  
Author(s):  
A. P. Firth ◽  
A. E. Owen ◽  
P. J. Ewen
Keyword(s):  

1994 ◽  
Vol 38 (4) ◽  
pp. 1101-1125 ◽  
Author(s):  
Lynden A. Archer ◽  
Kelly Huang ◽  
Gerald G. Fuller

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.


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