HIGHLY CONTROLLED DIFFUSION OF ION IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON BEAM HEATING

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-229-C5-233
Author(s):  
D. J. Godfrey ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
M. Dowsett
Keyword(s):  
Electron Beam ◽  
Controlled Diffusion ◽  
Beam Heating ◽  
Multiple Scan ◽  
Electron Beam Heating ◽  
Ion Implanted

The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing

1992 ◽  
Vol 279 ◽  
Author(s):  
V. A. Kagadey ◽  
N. I. Lebedeva ◽  
D. I. Proskurovsky ◽  
L. V. Yakovleva
Keyword(s):  
Activation Energy ◽  
Electron Beam ◽  
Potential Barrier ◽  
Qualitative Model ◽  
Vacuum Interface ◽  
Beam Heating ◽  
Electron Beam Heating ◽  
Volatile Impurities ◽  
Comprehensive Study ◽  
Ion Implanted

ABSTRACTThe paper presents the results of a comprehensive study of the outdif-fusion of volatile impurities (P, As, Sb) from originally amorphous ion-implanted layers (IILs) of Si at rapid electron-beam heating in vacuum. The phenomenon of enhanced outdiffusion has been discovered and the activation energy of this process has been measured. It has been established that there exists an interconnection between the process of activation, deactivation, diffusion and segregation of the impurity in IIL and its outdiffusion. A qualitative model of the process determining this interconnection has been proposed. The reasons for the lowering of the potential barrier at the IIL-vacuum interface determining the abnormally high rates of vaporization of the impurity have been supposed.

Annealing and Diffusion of Boron in Self-Implanted Silicon by Furnace and Electron Beam Heating

1984 ◽  
Vol 36 ◽  
Author(s):  
D. J. Godfrey ◽  
R. A. McMahon ◽  
D. G. Hasko ◽  
H. Ahmed ◽  
M. G. Dowsett
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Furnace Annealing ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Wide Range ◽  
Beam Heating ◽  
Multiple Scan ◽  
And Diffusion ◽  
Electron Beam Heating

ABSTRACTThe annealing and diffusion behaviour of ion implanted boron over a wide range of doses in as-received and pre-amorphised silicon (180 keV 5 × 1015 cm−2 silicon implants) has been studied using conventional furnace annealing and multiple scan electron beam heating in the rapid isothermal annealing mode. The layers obtained have been characterised using spreading resistance profiling (SRP), SIMS and TEM.For furnace annealing the silicon implantation produces improved electrical activation for boron doses in excess of 1015 cm−2. SIMS and SRP data indicate that a higher level of peak activation has been achieved, whilst the overall amount of redistribution has been restricted. The reduction in diffusion achieved (∼0.2 μm) is greater than the maximum difference attributable to the effect of lower ion channelling for the silicon implanted samples. Cross-sectional TEM has been used to determine the resulting defect structure and provides insight into the details of the stable precipitated boron surface peak observed. A numerical diffusion model has been developed to allow interpretation of these experimental findings.Similar samples have been annealed using multiple scan electron beam heating (peak temperatures up to 1100°C for times up to 300 s). For silicon implanted with boron alone, where cooling commenced once the peak temperature of 1100°C had been reached, diffusion was restricted to 0.05 μm while the sheet resistance (32 Ω/square) was reduced by ∼25% compared to furnace anneals at 950°C. Identical annealing of silicon implanted samples produced improved activation with a sheet resistance of 26 Ω/square. Results from SIMS, SRP and TEM analysis of these experiments are reported.

151. Thermal shock testing using focused electron beam heating

Carbon ◽  
1969 ◽  
Vol 7 (6) ◽  
pp. 732
Author(s):  
R.D Reiswig ◽  
P.E Armstrong ◽  
L.S Levinson
Keyword(s):  
Electron Beam ◽  
Thermal Shock ◽  
Shock Testing ◽  
Beam Heating ◽  
Electron Beam Heating
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